“…Transparent semiconductor oxides have been extensively studied as new materials applied to thin-film transistors and photosensors due to their remarkable characteristics, including high mobility, low leakage current, small sub-threshold swing, wafer-scale deposition, and high electrical reliability and sensitivity. [1][2][3][4][5][6] Among the semiconductor oxides, indium gallium zinc oxide (n-IGZO), a wide bandgap semiconductor with a bandgap of ∼3.1-3.8 eV and stoichiometrically associated n-type conductivity (In : Ga : Zn = 1 : 1 : 1 atomic ratio), has been considered a viable candidate for transparent display applications. n-IGZO also has good uniformity, low-temperature processing, high optical transparency, good bias-thermal stress (BTS) stability, and chemical stability.…”