Influence of Electrodeposition Potential on the Properties of CuIn₅S₈Spinel Thin Films

Abstract

Ternary CuIn5S8 spinel thin films were deposited on indium tin oxide (ITO)-coated glass substrates using a one-step electrodeposition method. A new procedure for the deposition of CuIn5S8 samples is reported. Prior to the deposition, a cyclic voltammetric study was performed in unitary (Cu, S, In) systems, binaries (Cu-S, In-S) systems, and ternary Cu-In-S system. The influence of various deposition potentials on structural, morphological, optical and electrical properties of samples was investigated. Based on these studies, X-ray diffraction patterns show that CuIn5S8 cubic spinel phase was the main constituent of the deposited layers at applied potential of −1 V (vs. Ag/AgCl). From (AFM) analysis, it was found that the surface morphology, grain size roughness and thickness were strongly affected by varying the deposition potentials. At −1 V (vs. Ag/AgCl) an optical band-gap of approximately 1.54 eV for this material was determined by optical transmission spectroscopy. At potentials more negative than −0.8 V (vs. Ag/AgCl) the film is converted to n-type and exhibits lower resistivity.

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

“…This is confirmed with the work of Cheng et al [31] and our previously work [30,32]. The second reduction peak (C2) observed at À 900 mV versus Ag/AgCl presents a rapid increase in the cathodic current, which could be due to the formation of silver sulfide compound.…”

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

“…The uniform and well adherent CuIn 5 S 8 spinel thin films were deposited at optimized deposition potential of À1.0 V (vs. Ag/AgCl). Details of the deposition process are reported in a recent past work [17]. The deposition time (t d ) was kept at 15 min with magnetically stirring [4].…”

“…A variety of physical and chemical techniques have been employed to fabricate this material [11][12][13]. Among these methods, electrodeposition as a cheap and facile method is widely used for the co-deposition of copper indium sulfide thin films under particular conditions [14][15][16][17]. It is easy to scale up to produce films with good quality and large area [18].…”

Electrodeposited ZnIn2S4 onto TiO2 thin films for semiconductor-sensitized photocatalytic and photoelectrochemical applications

“…Compared with other deposition methods, electrodeposition provide numerous advantages, including, low temperature processing, arbitrary substrate shapes, controllable film thickness, morphology, and potential low capital cost. It is an isothermal process mainly controlled by electrical parameters [25]. As ZnIn 2 S 4 is non-toxic and pollution-free, and not susceptible to damage from photocorrosion, it is a potential substitute for CdS.…”