Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Almessiere, M.A.; Al–Otaibi, Amal L.; Assaker, I. Ben; Ghrib, Taher; Chtourou, R.

doi:10.1016/j.mssp.2015.07.003

Cited by 18 publications

(7 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…𝑑𝑥 is the Fermi integral and 𝜁 is a dimensionless coefficient (reduced Fermi energy) related to the chemical potential by 𝜁 = 𝜇/𝐾 B 𝑇 , which is taken as the Fermi energy at room temperature 𝜇 = 0.75 eV for the Ag 8 SnS 6 semiconductor. [38] This gives 𝑆 = −168.1 µVK −1 , which is near the experimental value with an error factor in the order of 13%, possibly due to the experimental measurement. In fact, the increase of the temperature difference for 50 K will increase the Seebeck coefficient.…”

mentioning

confidence: 55%

High Thermoelectric Figure of Merit of Ag ₈ SnS ₆ Component Prepared by Electrodeposition Technique

Ghrib

Al–Otaibi

Almessiere

et al. 2015

Chinese Phys. Lett.

Self Cite

View full text Add to dashboard Cite

A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated glass (ITO) substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56 eV and a free carrier concentration of 1.46 × 10 17 cm −3 . The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill's model, showing that the Ag8SnS6 material has a low thermal conductivity of 3.8 Wm −1 K −1 , high electrical conductivity of 2.4 × 10 5 Sm −1 , Seebeck coefficient of −180 𝜇VK −1 and a power factor of 6.9 mWK −2 m −1 , implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.

show abstract

mentioning

confidence: 55%

High Thermoelectric Figure of Merit of Ag ₈ SnS ₆ Component Prepared by Electrodeposition Technique

Ghrib

Al–Otaibi

Almessiere

et al. 2015

Chinese Phys. Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…It proves a narrow band gap of ATS. According to the different synthesis methods and nanoparticle sizes, the band gap of ATS ranges from 1.12 to 1.56 eV in different researches [32,37]. The optical band gap can be calculated by [38]: (αhυ)=A(hυ-E g ) n , where α is absorption coefficient, A is a constant and n is 0.5 or 2 for samples with a direct or indirect band gaps, respectively.…”

Section: Resultsmentioning

confidence: 99%

Application of facile solution-processed ternary sulfide Ag8SnS6 as light absorber in thin film solar cells

Zhu

Zheng

et al. 2018

Sci. China Mater.

View full text Add to dashboard Cite

Light absorber is critical to the further applications of thin film solar cells. Here, we report a facile solution-processed method with an annealing temperature below 250°C to fabricate Ag 8 SnS 6 (ATS) light absorber for thin film solar cells. After optimization, the ATS-based thin film solar cells exhibited a reproducible power conversion efficiency (PCE) of about 0.25% and an outstanding long-term stability with 90% of the initial PCE retained after a more than 1,000 h degradation test. This research revealed the potential application of ATS as an earth-abundant, low toxic and chemically stable light absorber in thin film solar cells.

show abstract

“…Therefore, to obtain a flat ATS thin film, sulfurization needs to be performed at an annealing temperature of 550 °C or higher and with an annealing time of 60 min or longer. Compared with the SEM images of ATS thin films obtained by the sputtering, spin-coating, and electrodeposition methods, the grain size was large, no voids existed, and a flat surface was obtained, thus indicating that highquality thin films, expected to be absorbing layers in solar cells, were obtained [17,22,25,26]. Figure 3 shows the EDS surface elemental mapping images of samples 1-6 prepared by sulfide annealing at different temperatures and times.…”

Section: Effect Of Annealing Temperature and Time On Thin Filmsmentioning

confidence: 99%

“…CTS has a direct band-gap energy and a high absorption coefficient in the order of 10 4 cm –1 [ 9 , 10 , 11 , 12 , 13 ]. However, the highest reported conversion efficiency of these cells is as low as 5.24% [ 14 ], possibly owing to the CTS band gap of 0.92–0.95 eV [ 15 , 16 , 17 ], which is far from the ideal band gap of 1.4 eV for the light-absorbing layer. Reportedly, a (Cu, Ag) 2 SnS 3 thin film, in which Ag (a homologous element of Cu) is added to the CTS, is expected to improve the open-circuit voltage (V OC ) and fill factor (FF) [ 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, for high efficiency of solar cells, the necessary conditions for the thin film of the light-absorbing layer are the size of the grain and the absence of voids and cracks. ATS thin films have, up to now, been prepared using three different deposition methods: sputtering [ 22 , 25 ], spin coating [ 26 ], and electrodeposition [ 17 ]. However, all thin films have small grain sizes and numerous voids, which is not promising for highly efficient solar cell thin films [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films

Munekata,

Uchimura,

Araki

et al. 2023

Materials

View full text Add to dashboard Cite

Ag8SnS6 (ATS) has been reported to have a band gap of 1.33 eV and is expected to be a suitable material for the light-absorbing layers of compound thin-film solar cells. However, studies on solar cells that use ATS are currently lacking. The objective of this study is to obtain high-quality ATS thin films for the realization of compound thin-film solar cells using vacuum deposition and sulfide annealing. First, glass/SnS/Ag stacked precursors are prepared by vacuum deposition. Subsequently, they are converted to the ATS phase via sulfide annealing, and various process conditions, namely, annealing time, annealing temperature, and number of steps, are studied. By setting the heat treatment temperature at 550 °C and the heat treatment time at 60 min, a high-quality ATS thin film could be obtained. Multi-step heat treatment also produces thin films with nearly no segregation or voids.

show abstract

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Cited by 18 publications

References 49 publications

High Thermoelectric Figure of Merit of Ag ₈ SnS ₆ Component Prepared by Electrodeposition Technique

High Thermoelectric Figure of Merit of Ag ₈ SnS ₆ Component Prepared by Electrodeposition Technique

Application of facile solution-processed ternary sulfide Ag8SnS6 as light absorber in thin film solar cells

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films

Contact Info

Product

Resources

About

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

Cited by 18 publications

References 49 publications

High Thermoelectric Figure of Merit of Ag 8 SnS 6 Component Prepared by Electrodeposition Technique

High Thermoelectric Figure of Merit of Ag 8 SnS 6 Component Prepared by Electrodeposition Technique

Application of facile solution-processed ternary sulfide Ag8SnS6 as light absorber in thin film solar cells

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films

Contact Info

Product

Resources

About

High Thermoelectric Figure of Merit of Ag ₈ SnS ₆ Component Prepared by Electrodeposition Technique

High Thermoelectric Figure of Merit of Ag ₈ SnS ₆ Component Prepared by Electrodeposition Technique