Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

“…Whereas, the second and third intersection at real axis (Z') correspond to the sum of (R S þR 1 ), and (R S þ R 1 þR 2 ), respectively, where, the diameter of the semicircles can be to perceive to correspond to the charge transfer resistance on the side of ZnS semiconductor and the double layer. Similar behavior was also reported by our group [37]. The equivalent circuit parameters for the impedance spectrum of ZnS deposited onto ITO substrate at applied potential of À1300 mV using Zn/S equal to 0.2 were estimated in the range of 2330 Ω, 1850 Ω, 457 nF, 4780 Ω and 3.69 mF for R s , R 1 , C 1 , R 2 and C 2 , respectively.…”

Exploring the Cu‐In‐S System under Solvothermal Conditions near the Composition CuIn5S8

“…Depending on the Cu/In ratio in CuIn 5 S 8 the optical bandgap varies from 1.57 eV (Cu/In = 0.22) to 1.87 eV (Cu/In = 0.5) . Varying the Cu/In ratio in electrodeposited CuIn 5 S 8 films led to crystallization of a phase pure material for Cu/In = 0.28, whereas all other samples were mixtures of CuInS 2 /CuIn 5 S 8 or CuIn 5 S 8 /In . An interesting structural observation was reported for the series (CuIn 5 S 8 ) 1– x (In 2 S 3 ) x , where all samples crystallized in F 43 m with a linear expansion of the lattice parameter with increasing x …”

Electrodeposited and characterization of Ag–Sn–S semiconductor thin films

“…the potential corresponding to the situation in which there is no accumulation of charge in the semiconductor and the energy bands show no bending. The shape of the MottSchottky plot is an indicator of the conductivity type of the semiconductor, where, negative sign is for p-type and positive for n-type semiconductor [51,52]. Fig.…”