Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

Arbi, N.; Assaker, I. Ben; Gannouni, M.; Kriaa, A.; Chtourou, R.

doi:10.1016/j.mssp.2015.07.084

Cited by 25 publications

(5 citation statements)

References 37 publications

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“…Thus, Sulphur ions in thiourea play a crucial role in producing multiple peaks of XRD and indicating the crystalline nature of films. Similar results were reported by Arbi et al [30] and Xu et al [31] by using electro-deposition technique, Khomyak et al [32] and Yoo et al [33] by using RF magnetron sputtering method.…”

Section: Xrd Studiessupporting

confidence: 88%

Influence of thiourea on the synthesis and characterization of chemically deposited nano structured zinc sulphide thin films

Padmavathy

Lee

Ponnuswamy

2018

J Mater Sci: Mater Electron

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Nanocrystalline ZnS thin films incorporated onto glass substrates by chemical bath deposition method were investigated by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV-Visible Spectroscopy (UV-Vis), Photoluminescence (PL), and Raman Spectroscopy (FT-R) studies. The influence of thiourea on the structural and optical properties of ZnS films was discussed in detail. The X-ray diffraction patterns confirmed the rhombohedral structure of ZnS thin films. AFM measurements indicated the nano carpet-like surface morphology variation in film with influence of thiourea. The optical absorption studies in the wavelength range of 200-800 nm showed that the band gap energy of ZnS has decreased from 3.69-3.36 eV, as thiourea varied from 0.2-0.8 M. The PL spectra divulged a shift near band edge emission around 360 nm, when thiourea concentration was increased. The Stokes shift calculations from PL emission spectra supported the relative intensities estimated from PL energy band spectra and showed a dependable repeatability for different molar concentrations. The Zn-S complexes were identified in the Raman spectra and the Raman spectral shift for 0.6 M composition of thiourea, which was found to be appreciable for ZnS thin films. The characterization studies clearly exposed the effect of thiourea onto the chemically deposited ZnS thin films.

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Section: Xrd Studiessupporting

confidence: 88%

Influence of thiourea on the synthesis and characterization of chemically deposited nano structured zinc sulphide thin films

Padmavathy

Lee

Ponnuswamy

2018

J Mater Sci: Mater Electron

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“…This defect absorption reduced with the increase in thickness and hence the bandgap shifted towards the higher value (≅3.5 eV). A few other researchers have reported similar variation . The deviation in the bandgap resulting from the fine grain structure of the films can be understood by quantum size effect .…”

Section: Optical Propertiesmentioning

confidence: 58%

Analysis of microstructural properties, energy band structure, and defect levels of ZnS films obtained from micro‐controlled SILAR method

Ashith

Rao

2018

Surface & Interface Analysis

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Zinc sulphide (ZnS) thin films were deposited on glass substrate by micro-controllerbased successive ion layer adsorption and reaction method using ZnCl 2 as a precursor.The films were found to be polycrystalline. The crystallite size of the films increased with the increase in both precursor concentration and immersion cycles. The increased crystallite size resulted in the reduction of grain boundary defects which, in turn, improved the electrical properties of the films. The energy band structure of the films was analysed using absorbance and photoluminescence spectra. The films displayed strong absorption for wavelengths less than 400 nm indicating the presence of a wide bandgap with shallow defect levels near the band edges. The bandgap of the films was estimated to be between 3.3 and 3.5 eV. The photoluminescence spectra of the films exhibited a prominent excitonic peak at around 3.33 eV. The defect level emissions were observed at around 3.1, 2.92, 2.76, and 2.64 eV. These emissions were attributed to the transitions from localized zinc and sulphur vacancy levels and interstitial states. An energy band diagram of the films was drawn based on the result of optical and photoluminescence studies.

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“…This trend may be explained by the coalescence of the small grains at higher Cu concentrations. On the other hand, the values of microstrain are found to decrease from 0.29 to 0.17 % with the increasing of Cu concentration, which indicates the improvement of the crystalline quality [18].…”

Section: Structural Analysismentioning

confidence: 88%

“…]/[Zn 2? ]) varied in the range (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) at.% with a step of 6 at.%.…”

Section: Experimental Details 21 Materialsmentioning

confidence: 99%

Effect of copper concentration on the physical properties of ZnS:Cu alloys prepared by chemical bath deposition

Jrad

Naffouti

Nefzi

et al. 2016

J Mater Sci: Mater Electron

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ZnS:Cu thin films were deposited on glass substrates by chemical bath deposition technique. The structural, morphological, optical and electrical properties of the grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectrometry, scanning electron microscopy, spectrophotometry, spectrofluorimetry and Hall effect measurements. Both XRD and Raman analysis indicated the coexistence of both sphalerite ZnS and covellite CuS with cubic and hexagonal structures, respectively. The optical band gap of the films increased from 3.70 to 3.75 eV with Cu concentration increment. Photoluminescence studies revealed that the incorporation of Cu 2? ions in ZnS matrix blue shifted and quenched the emission bands. Electric resistivity, volume carrier concentration, surface carrier concentration and Hall mobility were determined from Hall effect measurements. Indeed, for pure sample, the obtained values were about 7.586 9 10 4 X cm, 1.472 9 10 11 cm -3 , 2.944 9 10 6 cm -2 and 5.590 9 10 2 cm 2 V -1 s -1 , respectively. However, after Cu incorporation, these values varied in the range of (2.273 9 10 4 -13.80 9 10 4 ) X cm, (2.334 9 10 11 -9.094 9 10 13 ) cm -3 , (4.668 9 10 6 -1.819 9 10 9 ) cm -2 and (3.092 9 10 -1 -1.937 9 10 2 ) cm 2 V -1 s -1 , respectively.

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Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

Cited by 25 publications

References 37 publications

Influence of thiourea on the synthesis and characterization of chemically deposited nano structured zinc sulphide thin films

Influence of thiourea on the synthesis and characterization of chemically deposited nano structured zinc sulphide thin films

Analysis of microstructural properties, energy band structure, and defect levels of ZnS films obtained from micro‐controlled SILAR method

Effect of copper concentration on the physical properties of ZnS:Cu alloys prepared by chemical bath deposition

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