Influence of electrochemical properties on electrochemical migration of SnPb and SnBi solders

Yoo, Young-Ran; Kim, Y. S.

doi:10.1007/s12540-010-1007-6

Cited by 38 publications

(19 citation statements)

References 15 publications

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“…The time from the beginning of ECM test to the time when a short circuit occurs is called time-to-failure 61,62,[65][66][67][68] or time-to-short, [49][50][51][52][71][72][73] which is an extremely important parameter used to quantitatively assess the ECM susceptibility of materials. Some investigators also called the time-to-failure as the failure time.…”

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confidence: 99%

“…According to the literature, three main environments were used including pure water or distilled water, 78,81 chloride-containing solution [60][61][62][63][64]67,68 and sulfate-containing containing solution. [61][62][63]67 It can be summarized that the time-to-failure which is proportional to the ECM resistance of Sn-Pb solder alloys decreases with increasing Pb content in a pure water or chloride-containing solution, whereas it increases with increasing Pb content in sulfate-containing solution. A few examples are given below.…”

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confidence: 99%

“…Lee et al and Yoo et al [60][61][62]67 performed respectively a series of ECM experiments of Pb, Sn and Sn-Pb solder alloys in sulfate-containing solution. They found that the time-to-failure increased with increasing Pb content, indicating that the addition of Pb increased the ECM resistance of Sn-Pb solder alloys in sulfate-containing solution.…”

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Electrochemical migration of Sn and Sn solder alloys: a review

et al. 2017

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Sn and Sn solder alloys in microelectronics are the most susceptible to suffer from electrochemical migration (ECM) which significantly compromises the reliability of electronics. This topic has attracted more and more attention from researchers since the miniaturization of electronics and the explosive increase in their usage have largely increased the risk of ECM. This article first presents an introductory overview of the ECM basic processes including electrolyte layer formation, dissolution of metal, ion transport and deposition of metal ions. Then, the article provides the major development in the field of ECM of Sn and Sn solder alloys in recent decades, including the recent advances and discoveries, current debates and significant gaps. The reactions at the anode and cathode, the mechanisms of precipitates formation and dendrites growth are summarized. The influencing factors including alloy elements (Pb, Ag, Cu, Zn, etc.), contaminants (chlorides, sulfates, flux residues, etc.) and electric field (bias voltage and spacing) on the ECM of Sn and Sn alloys are highlighted. In addition, the possible strategies such as alloy elements, inhibitor and pulsed or AC voltage for the inhibition of the ECM of Sn and Sn solder alloys have also been reviewed.

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Electrochemical migration of Sn and Sn solder alloys: a review

et al. 2017

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“…In general, the main characteristics of a Pb-free solder is an accepted level of mechanical and electrical performance, reasonable melting temperature, be corrosion resistant, harmless to health and environment and cost effective [10,11]. The reliability of the solder joint is directly related to the lifetime of electronic devices, which in turn is related to material characteristics like coefficient of thermal expansion, acceptable elastic modulus, high hardness, tensile strength, shear strength, high fatigue and creep resistance [12].…”

Section: Introductionmentioning

confidence: 99%

Influence of small Sb nanoparticles additions on the microstructure, hardness and tensile properties of Sn–9Zn binary eutectic solder alloy

Ismathullakhan

Chan

Wong

et al. 2012

J Mater Sci: Mater Electron

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In the present study, different weight percentages of Sb nanoparticles (100-120 nm) ranging from 0 to 1.5 wt% were added to Sn-9Zn eutectic solder alloy to investigate the effect of third element addition on the microstructure, mechanical properties as well as thermal behavior of the newly developed composite solder alloys.The results indicate that the Sb nano-particle based intermetallic compounds (IMC) were found uniformly distributed, refined the microstructure and formed IMC particles in the eutectic solder alloy. After the addition of nano Sb particles in Sn-9Zn solder, fine a-Zn phase and e-Sb 3 Zn 4 IMC particles were clearly observed in the b-Sn matrix. The e-Sb 3 Zn 4 IMC particles were uniformly distributed in the b-Sn phase, which resulted in an increase in the tensile strength due to the second phase dispersion strengthening mechanism. However, in the doped Sn-9Zn/1.5Sb alloys, a-Zn phases were broken enormously, depleted and round shaped compared to the normal rod shaped a-Zn phase microstructure in plain Sn-9Zn solder. In comparison, the e-Sb 3 Zn 4 IMC particle in the doped Sn-9Zn/1.0Sb alloy were star shaped. The average tensile strength and microhardness of the Sb doped Sn-9Zn solder alloys were consistently higher than the plain un-doped Sn-9Zn solder. The tensile strength and the microhardness increased with increasing Sb nano-particle content, up to 1.0 wt% of Sb content, and then decreased beyond that threshold value. Consequently the percentage (%) elongation of the Sb nanoparticle doped Sn-9Zn solder decreased with increasing Sb nano-particle content, up to 1.0 wt% of Sb content, and then increased beyond that threshold value.

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“…3D-IC bonding material and technology use several methods [9][10][11][12][13][14][15][16][17] including Cu-Cu direct bonding in which copper which has low electrical resistivity, reduced RC delay, and high electromigration (EM) resistance, is a congenial material for 3D integration technology [18]. However, Cu native oxide quickly forms on the Cu surface, and thick oxides hinder the bonding process and decrease bonding quality.…”

Section: Introductionmentioning

confidence: 99%

Annealing temperature effect on the Cu-Cu bonding energy for 3D-IC integration

Jang

Kim

et al. 2011

Met. Mater. Int.

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Interfacial adhesive energy was evaluated quantitatively in relation to the bonding temperature and subsequent thermal treatment to develop a Cu-Cu thermal compressed bonding process at low temperature for a threedimensional integration circuit (3D-IC) package. Two pieces of sputtered Cu films coated on a Si wafer were bonded at 300°C, 350°C, and 400°C. A high bonding temperature increased the interfacial adhesive energy, and the original interfacial layers of Cu film gradually disappeared, as observed in focus ion beam (FIB) images. Specimens of Cu to Cu bonding were thermally compressed at 300°C and were post-annealed at 200°C, 250°C, and 300°C in a N 2 environment for 1 h. As a result, the original interfacial layer of Cu disappeared at 300°C, and an interfacial adhesive energy value above 10 J/m 2 was obtained.

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Influence of electrochemical properties on electrochemical migration of SnPb and SnBi solders

Cited by 38 publications

References 15 publications

Electrochemical migration of Sn and Sn solder alloys: a review

Electrochemical migration of Sn and Sn solder alloys: a review

Influence of small Sb nanoparticles additions on the microstructure, hardness and tensile properties of Sn–9Zn binary eutectic solder alloy

Annealing temperature effect on the Cu-Cu bonding energy for 3D-IC integration

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