Influence of electric conductivity on intensity factors for cracks in functionally graded piezoelectric semiconductors

Sládek, J.; Sládek, V.; Bishay, Peter L.; García-Sánchez, F.

doi:10.1016/j.ijsolstr.2015.01.012

Cited by 38 publications

(13 citation statements)

References 33 publications

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“…That is why we introduce the apparent remote electric displacement 0 D in Eq. (24). It should be noted that some techniques and methods can be used to improve the accuracy of the SIF [34], for example, the quarter-point element to treat the square-root singularity at the crack tips and the extrapolation method.…”

Section: Analysis Of a Center Crack In A Rectangular Piezoelectric Sementioning

confidence: 99%

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Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method

Fan

Yan

et al. 2016

Engineering Fracture Mechanics

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Section: Analysis Of a Center Crack In A Rectangular Piezoelectric Sementioning

confidence: 99%

“…The influence of the initial electron density on the intensity factors and energy release rate was also investigated. Very recently, Sladek et al [24] investigated the influence of electric conductivity on intensity factors for cracks in conducting piezoelectric materials and functionally graded conducting piezoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method

Fan

Yan

et al. 2016

Engineering Fracture Mechanics

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“…The resistance of thin layers is also affected by the anisotropic properties of the substrate [7]. The impact of defects on the electrical properties of films has been discussed by [8][9][10][11][12][13][14][15]. Physical vacuum deposition is used primarily when a high deposition index is required for a high-quality thin layer.…”

Section: Introductionmentioning

confidence: 99%

Field Modeling the Impact of Cracks on the Electroconductivity of Thin-Film Textronic Structures

2020

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Wearable electronics are produced by depositing thin electroconductive layers with low resistance on flexible substrates. In the process of producing such metallic films, as well as during their usage, structural defects may appear which affect their electrical properties. In this paper, we present analytical and numerical models for understanding phenomena related to the electrical conductivity of thin electroconductive layers. The algorithm in the numerical model is based on the boundary integral equation method. The formulas enable calculation of the potential distribution and electric field strength of the analyzed structures, and describe the impact of cracks on their electrical resistance. The validity of the proposed models was verified by experimental results.

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“…Sladek et al (2014a) analyzed the intensity factors and energy release rate of an in-plane crack in PSCs under a transient thermal load. They also studied the anti-plane crack problem in functionally graded PSCs (Sladek et al, 2014b, 2015) and investigated the influence of electric conductivity on the intensity factors. More recently, Fan et al (2016) presented a piezoelectric-conductor iterative method to calculate the stress, electric displacement, and electric current intensity factors in two-dimensional (2D) PSCs.…”

Section: Introductionmentioning

confidence: 99%

Penny-shaped cracks in three-dimensional piezoelectric semiconductors via Green’s functions of extended displacement discontinuity

Zhao

Zhou

Zhao

et al. 2016

Journal of Intelligent Material Systems and Structures

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In this article, a penny-shaped crack in the isotropic plane of three-dimensional transversely isotropic piezoelectric semiconductors is analyzed via the displacement discontinuity boundary element method. The general solutions are derived based on the generalized Almansi’s theorem and the operator theory. Green’s functions are derived using the Hankel transformation under uniformly distributed extended displacement discontinuities (including displacement discontinuities, potential discontinuity, and electron density discontinuity) on a penny-shaped crack in the isotropic plane of three-dimensional transversely isotropic piezoelectric semiconductors. Using the extended displacement discontinuity boundary element method, penny-shaped cracks in transversely isotropic plane of three-dimensional piezoelectric semiconductors are studied, and the stress, electric displacement, and electric current intensity factors under uniform mechanical-electric-current loads applied on the penny-shaped crack surface are calculated. The fracture behaviors of piezoelectric semiconductors are studied.

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Influence of electric conductivity on intensity factors for cracks in functionally graded piezoelectric semiconductors

Cited by 38 publications

References 33 publications

Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method

Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method

Field Modeling the Impact of Cracks on the Electroconductivity of Thin-Film Textronic Structures

Penny-shaped cracks in three-dimensional piezoelectric semiconductors via Green’s functions of extended displacement discontinuity

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