Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method

Fan, CuiYing; Yan, Yang; Xu, Guoyan; Zhao, Minghao

doi:10.1016/j.engfracmech.2016.02.057

Cited by 47 publications

(8 citation statements)

References 29 publications

(35 reference statements)

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“…As shown in Figure 3, the COD, electric potential and electron density across crack face are compared with that given by Fan et al (2016). It is seen that the results are consistent with each other, implying correctness of the double iteration approach.…”

Section: Validation Of the Double Iteration Approachsupporting

confidence: 60%

“…In the outside circulation, each step calls the internal circulation, and the electric displacement across crack face is modified constantly. The details of internal circulation is given by Fan et al (2016).…”

Section: Double Iteration Approachmentioning

confidence: 99%

“…Let us consider a 2D n -type transversely isotropic PSC under a static equilibrium state in the Cartesian coordinate system oxz . The governing equations (Fan et al, 2016) can be represented as…”

Section: Basic Equations and Boundary Conditionsmentioning

confidence: 99%

“…Zhao et al (2016b) studied a central crack problem in PSCs, and gained numerical solutions of extended stress intensity factors by using an extended displacement discontinuity method. By presenting an iterative finite element method (FEM) (Fan et al, 2016), a central crack problem in PSCs was studied and the effect of an initial electron density on extended stress intensity factors was discussed. Based on an iterative boundary element method, an elliptical hole problem and a central crack problem in PSCs with linear constitutive equations were directly solved (Zhang et al 2017b), and an elliptical hole problem in PSCs with nonlinear constitutive equations was solved by adopting the Gaussian integral transformation (Zhao et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear analysis of a crack in 2D piezoelectric semiconductors with exact electric boundary conditions

Zhao

et al. 2020

Journal of Intelligent Material Systems and Structures

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In this paper, taking the exact electric boundary conditions into account, we propose a double iteration method to analyze a crack problem in a two-dimensional piezoelectric semiconductor. The method consists of a nested loop process with internal and outside circulations. In the former, the electric field and electron density in governing equations are constantly modified with the fixed boundary conditions on crack face and the crack opening displacement; while in the latter, the boundary conditions on crack face and the crack opening displacement are modified. Such a method is verified by numerically analyzing a crack with an impermeable electric boundary condition. It is shown that the electric boundary condition on crack face largely affects the electric displacement intensity factor near a crack tip in piezoelectric semiconductors. Under exact crack boundary conditions, the variation tendency of the electric displacement intensity factor versus crack size is quite different from that under an impermeable boundary condition. Thus, exact crack boundary conditions should be adopted in analysis of crack problems in a piezoelectric semiconductor.

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Section: Validation Of the Double Iteration Approachsupporting

confidence: 60%

Section: Double Iteration Approachmentioning

confidence: 99%

Section: Basic Equations and Boundary Conditionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nonlinear analysis of a crack in 2D piezoelectric semiconductors with exact electric boundary conditions

Zhao

et al. 2020

Journal of Intelligent Material Systems and Structures

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“…Based on the extended displacement discontinuity boundary integral equation, Zhao et al [ 18 ] numerically simulated and verified the stress singularities near the edge of a planar crack. According to the finite element and boundary element methods, Fan et al [ 19 ] and Zhang et al [ 20 ] proposed a piezoelectric-conductor iterative approach for structural analysis of PSC with combined mechanical and electrical loading. Zhao et al [ 21 ] analyzed a penny-shaped crack in the isotropic plane of PSC and, based on Almansi’s theory, derived its general solutions.…”

Section: Introductionmentioning

confidence: 99%

Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics

Qin

Zhang

et al. 2018

Materials

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In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications.

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Magnetically Controllable Piezotronic Responses in a Composite Semiconductor Fiber with Multiferroic Coupling Effects

Cheng

Zhang

et al. 2019

Physica Status Solidi (a)

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Herein, a multiferroic composite semiconductor (MCS) fiber, in which the carriers transport behaviors can be effectively controlled by applying a magnetic field, is proposed. The fiber consists of two outer piezomagnetic (PM) layers, two piezoelectric (PE) layers, and a semiconducting core, and hence exhibits the comprehensive magneto-electro-semiconductive (MES) coupling effects. Based on the basic equations of multiferroic composites and the drift-diffusion model of currents in semiconductor physics, a 1D theoretical model for the laminated MCS fiber with the MES coupling effects is presented, and an analysis of the extensional deformation induced by a magnetic field is conducted. The electrons move toward one end of the fiber under the PE field resulting from the MES coupling mechanism. As a result, this leads to the redistribution of electrons in the fiber. Theoretical results show that the magnetic field as well as the initial concentration of carriers and the volume fraction of the PM or PE layer have obvious effects on the carriers transport properties and mechanical behaviors of the MCS fiber. Compared with the mechanical tuning method of piezotronics, such a magnetic field based tuning method via the MES coupling effects has some advantages because it is remote and contactless.

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Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method

Cited by 47 publications

References 29 publications

Nonlinear analysis of a crack in 2D piezoelectric semiconductors with exact electric boundary conditions

Nonlinear analysis of a crack in 2D piezoelectric semiconductors with exact electric boundary conditions

Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics

Magnetically Controllable Piezotronic Responses in a Composite Semiconductor Fiber with Multiferroic Coupling Effects

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