Influence of dislocation density on photoluminescence intensity of GaN

Fälth, J. F.; Gurusinghe, MN; Xy, Liu; Andersson, Thomas; Ivanov, Ivan Gueorguiev; Ḿonemar, B.; Yao, H. H.; Sc, Wang

doi:10.1016/j.jcrysgro.2005.01.010

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…The contribution of dislocations to nonradiative recombination centers can be quantitatively estimated by the depletion region formed around the dislocation lines [7]. Karpov et al [8] have made a quantitative analysis of the dislocation density-dependent PL intensity.…”

Section: Dislocations and Near-band Edge Luminescencementioning

confidence: 99%

Optical analysis of dislocation‐related physical processes in GaN‐based epilayers

Jiang

Zhao

Yang

2007

Physica Status Solidi (b)

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In this paper, recent progresses in optical analysis of dislocation-related physical properties in GaN-based epilayers are surveyed with a brief review. The influence of dislocations on both near-band edge emission and yellow luminescence (YL) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. Threading dislocations may introduce non-radiative recombination centers and enhance YL, but their effects are affected by the structural and chemical environment. The minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. The in situ optical monitoring of the strain evolution process is employed during GaN heteroepitaxy using an AlN interlayer. A typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed.

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Section: Dislocations and Near-band Edge Luminescencementioning

confidence: 99%