Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Gómez‐Aleixandre, C.; Essafti, A.; Fernández, M.; Fierro, and J. L. G.; Albella, J. M.

doi:10.1021/jp951200d

Cited by 46 publications

(31 citation statements)

References 18 publications

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“…The N 1s signal at 400.0 eV indicates that the N is bonded to O. [10] Since only one O 1s peak at 533.2 eV is detected in the sample, the tiny amounts of N and O along with the B probably form the B-O-N in the BNWs.…”

Section: Resultsmentioning

confidence: 97%

See 1 more Smart Citation

Nucleation and Growth of Boron Nanowires on ZrB₂ Particles

Guo¹,

Singh²,

Kleebe³

2006

Chemical Vapor Deposition

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Amorphous boron rich nanowires are grown on ZrB 2 particles using diborane as the gas precursor in a CVD process under 20 Torr pressure and at 900°C. These nanowires have uniform diameters of tens of nanometers and lengths of up to several micrometers. The boron-rich nanowires are characterized and found to be composed of boron clusters containing unit cells of icosahedral B 12 . A surface nucleation and growth mechanism of solid boron from vapor phase is proposed to explain the nanowire growth. The role of ZrB 2 particles in the synthesis of the boron-rich nanostructures is also discussed.

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Section: Resultsmentioning

confidence: 97%

“…The corresponding X-ray photoelectron spectroscopy (XPS) spectra show the same presence of B-rich structures from both the elemental and atomic chemical state of the products. [10] in which B-B is the dominant bond in the BNWs. However, no B-N bonds are found (190.6 eV).…”

Section: Resultsmentioning

confidence: 99%

Nucleation and Growth of Boron Nanowires on ZrB₂ Particles

Guo¹,

Singh²,

Kleebe³

2006

Chemical Vapor Deposition

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“…Ismach et al reported the growth of atomically smooth h ‐BN layers on Ni substrates at 1025 °C and 135 mTorr; however, nanocrystalline t ‐BN was dominant when grown on Al 2 O 3 . Other research groups have reported the growth of mixed‐phase BN, including amorphous BN ( a ‐BN), t ‐BN, cubic BN ( c ‐BN), wurtzite BN ( w ‐BN), and rhombohedral BN ( r ‐BN), by plasma‐assisted CVD . Overall, a high T g seems to be required for growth on Al 2 O 3 substrates .…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition Growth of BN Thin Films Using B₂H₆ and NH₃

Yamada

Inotsume

Kumagai

et al. 2019

Physica Status Solidi (b)

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The use of chemical vapor deposition (CVD) for the growth of BN thin films on Al 2 O 3 substrates using B 2 H 6 and NH 3 is investigated. The simultaneous supply of B 2 H 6 and NH 3 at a growth temperature of 1360 C under a pressure of 100 mbar results in a rough surface, indicating 3D island growth, regardless of the V/III ratio. Furthermore, a significant decrease in growth rate is observed at high V/III ratios, owing to parasitic reactions between the B 2 H 6 and NH 3 sources. In contrast, alternating the supply of B 2 H 6 and NH 3 results in BN films with honeycomb-like wrinkle patterns. The X-ray diffraction peak intensities from the (002) and (004) planes of hexagonal boron nitride (h-BN) increase as the number of supply cycles is increased. The BN film deposited with 1000 supply cycles shows a Raman shift at 1369 cm À1 with a full width at half maximum of 20 cm À1 , corresponding to the first-order E 2g symmetry vibrational mode in h-BN.

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“…The boron precursor was 0.01% diborane (B 2 H 6 ) diluted in H 2 . Diborane and ammonia have been commonly used to produce BN [5]. The B 2 H 6 and NH 3 were separately introduced into the reactor and mixed just above the susceptor to avoid their parasitic gas phase reaction at room temperature [6].…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of B_xGa_1−xN on 6H-SiC (0001) by Movpe

Wei

Xie

Edgar

et al. 1999

MRS Internet j. nitride semicond. res.

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Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. B x Ga 1-x N films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and B x Ga 1-x N alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no B x Ga 1-x N was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of B x Ga 1-x N varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

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Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Cited by 46 publications

References 18 publications

Nucleation and Growth of Boron Nanowires on ZrB₂ Particles

Nucleation and Growth of Boron Nanowires on ZrB₂ Particles

Chemical Vapor Deposition Growth of BN Thin Films Using B₂H₆ and NH₃

Growth and Characterization of B_xGa_1−xN on 6H-SiC (0001) by Movpe

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Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Cited by 46 publications

References 18 publications

Nucleation and Growth of Boron Nanowires on ZrB2 Particles

Nucleation and Growth of Boron Nanowires on ZrB2 Particles

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3

Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

Contact Info

Product

Resources

About

Nucleation and Growth of Boron Nanowires on ZrB₂ Particles

Nucleation and Growth of Boron Nanowires on ZrB₂ Particles

Chemical Vapor Deposition Growth of BN Thin Films Using B₂H₆ and NH₃

Growth and Characterization of B_xGa_1−xN on 6H-SiC (0001) by Movpe