1982
DOI: 10.1063/1.331461
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Influence of carbon and oxygen on donor formation at 700 °C in Czochralski-grown silicon

Abstract: Influence of transition metal impurities on oxygen precipitation in Czochralskigrown silicon

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Cited by 37 publications
(7 citation statements)
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“…4, a reduction in the substitutional carbon concentration is plotted as a function of the isochronal annealing temperature. This result is consistent with the earlier experimental observations in the temperature range between 700 ~ and 750~ (17)(18). 2.…”
Section: Resultssupporting
confidence: 93%
See 1 more Smart Citation
“…4, a reduction in the substitutional carbon concentration is plotted as a function of the isochronal annealing temperature. This result is consistent with the earlier experimental observations in the temperature range between 700 ~ and 750~ (17)(18). 2.…”
Section: Resultssupporting
confidence: 93%
“…The carbon donors are not. The above statement is substantiated by the previously published data showing that during a 700~ anneal the reduction in the interstitial oxygen concentration in high-carbon silicon could proceed without generating any additional carbon donors (17). 2, the carbon donors are still observed after a 50h anneal at 1050~ Second, the new oxygen donor concentration, in the temperature range between 600 ~ and 825~ is closely related to the reduction in interstitial oxygen concentration (7)(8).…”
Section: Resultssupporting
confidence: 59%
“…However, some important findings have recently been reported: (1) presence of oxygen related precipitation and carbon related precipitation [39], (2) reduction of carbon concentration accompanied with annealing [40], (3) new donor concentration increase related to carbon reduction [41], (4) carbon/oxygen complex presence [42], (5) oxidation-retarded precipitation [43]. Pinizzotto et al have reported that in specimens with high concentration of oxygen interstitials the oxygen interstitials have precipitated independently of carbon whereas in specimens with low concentration of oxygen interstitials carbon effects precipitation [39].…”
Section: Nucleation Of Oxide Precipitatesmentioning
confidence: 97%
“…Oxygen-related donors, called new donors (NDs), have been recognized to be created by annealing CZ silicon at 600 to 800 0 C [1][2][3][4][5][6][7][8][9]. However, little has been known about their electronic properties.…”
Section: Introductionmentioning
confidence: 99%