A Formation Mechanism of the Thermal Donors Related to Carbon in Silicon after an Extended Isochronal Anneal

Wijaranakula, W.; Matlock, J. H.

doi:10.1149/1.2086840

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…The linear increase of from negative to positive values can be explained considering that, in agreement with Ref. 43, the concentration of TDs is increasing almost linearly with annealing time, up to the overcompensation of the B dopants.…”

Section: Thermal Donor's Formation Ratesupporting

confidence: 82%

Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

Bruzzi

Menichelli

Scaringella

et al. 2006

Journal of Applied Physics

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A quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430°C up to a total time of 120 min. Space charge density after each annealing step has been measured by transient current technique. The localized energy levels related to thermal double donors ͑TD͒ have been observed and studied in details by thermally stimulated currents ͑TSCs͒ in the range of 10-70 K, and activation energies E and effective cross sections have been determined for both the emissions TD 0/+ ͑E = 75± 5 meV, =4ϫ 10 −14 cm 2 ͒ and TD +/+ ͑E = 170± 5 meV, =2ϫ 10 −12 cm 2 ͒. The evolution of the space charge density caused by annealing has been unambiguously related to the activation of TDs by means of current deep level transient spectroscopy TSC, and current transients at constant temperature i͑t , T͒. Our results show that TDs compensate the initial boron doping, eventually provoking the sign inversion of the space charge density. TD's generation rate has been found to be linear with the annealing time and to depend critically on the initial interstitial oxygen concentration, in agreement with previous models developed on low resistivity silicon.

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Section: Thermal Donor's Formation Ratesupporting

confidence: 82%

Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

Bruzzi

Menichelli

Scaringella

et al. 2006

Journal of Applied Physics

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“…8, the concentration of thermal donors (TD*) observed in low carbon-samples after a three-step anneal is plotted as a function of depth from the silicon surface. These thermal donors can be detected only in silicon containing carbon after the growth anneal at 1000~ and thus are different from those observed in carbon-doped samples after an extended anneal in the temperature range between 500 and 800~ (25). A formation of thermal donors in silicon containing carbon has been previously observed after a three-step anneal consisting of a 2 h denudation anneal at 1200~ a 16 h nucleation anneal at 700~ followed by a 16 h growth anneal at 1000~ (16).…”

Section: Resultsmentioning

confidence: 67%

A Formation of Crystal Defects in Carbon‐Doped Czochralski‐Grown Silicon after a Three‐Step Internal Gettering Anneal

Wijaranakula¹,

Matlock²

1991

J. Electrochem. Soc.

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which TMOS is partly substituted by modified alkoxysilanes containing nonhydrolyzable Si--C bonds. Coatings formed from the latter sol-gel systems show no crack formation, at least up to those temperatures at which the thermal decomposition of the included organic groups begins (system V: 473-523 K; system M: 523-573 K; system ME: 673-773 K; system P: 773-873 K).Thus the main conclusions which can be drawn from the results of this work are:The already known phenomenon of increasing the thermal stability of sol-gel films using a mixture of tetraalkoxysilanes and organically modified alkoxysilanes was confirmed in several cases (introduction of different organic groups into the sol-gel solution).Thermal stability of those organically modified sol-gel films strongly depends on the nature of the introduced organic groups, especially on the temperature of their decomposition. Thus crack formation occurs in the latter temperature range, if the organic groups are decomposed at temperatures lower than ca. 673 K. To obtain crack-free thick sol-gel films (up to 1400 nm were realized in planarization experiments), organic groups must be introduced the thermal decomposition of which occurs at temperatures higher than ca. 723 K.The organic components remarkably influence the structural evolution of the sol-gel film with increasing temperature. This is clearly documented by frequency changes of the asymmetric valence vibration band of the siloxane bridges.

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“…The type conversion that occurs is due to thermal donors [1]. Thermal donors are a class of defect complexes consisting of oxygen [2] and vacancies [3] and sometimes carbon [4] or hydrogen. One important factor for the formation of defect complexes is the diffusivity [5,6] of the point defects which are involved.…”

mentioning

confidence: 99%

An EBIC and SRP study on thermal donors in proton implanted p‐type magnetic Czochralski silicon

Faccinelli

Kirnstoetter

Schustereder

et al. 2014

Phys. Status Solidi C

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The concentration of defects in silicon can be changed by ion implantations and thermal annealing steps. Some of the defects incorporated during these processes form complexes which can act as donors or acceptors and their concentration can even overcome the initial doping concentration of the material, and hence, cause an inversion of the doping type. One way to introduce defects and also to catalyse the formation of defect complexes is by proton implantation. For our project, a high resistivity p‐type magnetic Czochralski (m:Cz) grown silicon wafer was implanted with 4 MeV protons at an implantation dose of 2 ×1014 cm–2. The wafer was broken into pieces and these pieces were annealed at different temperatures resulting in different concentrations of defect complexes. The defects were investigated in the proton implanted region and in the substrate region beyond the penetration depth of the protons (where only the heat treatment caused a change in the defect concentrations). The local doping type and the relative change of the minority carrier diffusion length were measured using Electron Beam Induced Current (EBIC). Furthermore, resistivity profiles were measured using Spreading Resistance Profiling (SRP). The results show several changes of the doping type, the minority carrier diffusion length and the resistivity profile. In addition to donor complexes already reported in the literature, the formation of additional high temperature donor complexes has been observed. The data shows that the presence of hydrogen in silicon has a far higher influence on the changes of the electrical properties of the material at annealing temperatures between 400 °C and 510 °C than at higher annealing temperatures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A Formation Mechanism of the Thermal Donors Related to Carbon in Silicon after an Extended Isochronal Anneal

Cited by 7 publications

References 13 publications

Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

A Formation of Crystal Defects in Carbon‐Doped Czochralski‐Grown Silicon after a Three‐Step Internal Gettering Anneal

An EBIC and SRP study on thermal donors in proton implanted p‐type magnetic Czochralski silicon

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