New DLTS Peaks Associated with New Donors and Rodlike Defects in Czochralski Silicon

Abstract

We have studied the effects of low-temperature preannealing and carbon on new donor formation at 650 0 C in phosphorus-doped Czochralski (CZ) silicon by deep-level transient spectroscopy (DLTS).In not preannealed carbon-lean samples, only a weak continuous DLTS spectrum often reported so far was observed.The intensity of this broad feature became significantly stronger in not preannealed carbon-rich samples.On the contrary, preannealed samples showed no such continuous spectra but two new DLTS peaks arising from shallow donor levels.Carbon enhanced the low-temperature peak, but retarded the high-temperature one.The latter peak is in strong correlation with the rodlike defect.