2019
DOI: 10.1149/2.0141904jes
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Influence of Annealing Temperature on Structural Compositions and pH Sensing Properties of Sol-Gel Derived YTixOyElectroceramic Sensing Membranes

Abstract: The present study was designed to determine the effect of annealing temperature on the sol-gel synthesized YTixOy electroceramic sensing membrane on silicon substrate as an electrolyte-insulator-semiconductor (EIS) based pH sensor. We observed that the YTixOy sensing membranes after annealing at high temperatures (700, 800 and 900°C) modify the structural feature, sensing characteristic and reliability. X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy have been used to reveal the… Show more

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Cited by 4 publications
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“…It is known that the gate-insulator material in the first ISFET was SiO 2 , which is not the best pH-sensitive material, having a low sensitivity, a narrow linear pH range, a relatively high drift, and a large hysteresis (see, e.g., [9,30,31]). Therefore, other oxides, like Al 2 O 3 [32][33][34], Ta 2 O 5 [29,35,36], ZrO 2 [37], HfO 2 [38][39][40][41], CeO 2 [42], Gd 2 O 3 [43,44], Ti-doped Gd 2 O 3 [45], Lu 2 O 3 [46], Nd 2 O 3 [47], Yb 2 O 3 [48], Dy 2 TiO 5 [49], Er 2 TiO 5 [50], PbTiO 3 [51], YTi x O y [52], Tm 2 Ti 2 O 7 [53], and barium strontium titanate (BST) [54][55][56], as well as Si 3 N 4 [32,57] and nanocrystalline diamond (NCD) [58], have been proven as pH-sensitive gate insulators for EIS sensors. Some of the recent results, including the pH-sensitive material used, deposition technique, pH sensitivity, pH range, drift, and hysteresis, are summarized in Table 1.…”
Section: Eis Ph Sensormentioning
confidence: 99%
“…It is known that the gate-insulator material in the first ISFET was SiO 2 , which is not the best pH-sensitive material, having a low sensitivity, a narrow linear pH range, a relatively high drift, and a large hysteresis (see, e.g., [9,30,31]). Therefore, other oxides, like Al 2 O 3 [32][33][34], Ta 2 O 5 [29,35,36], ZrO 2 [37], HfO 2 [38][39][40][41], CeO 2 [42], Gd 2 O 3 [43,44], Ti-doped Gd 2 O 3 [45], Lu 2 O 3 [46], Nd 2 O 3 [47], Yb 2 O 3 [48], Dy 2 TiO 5 [49], Er 2 TiO 5 [50], PbTiO 3 [51], YTi x O y [52], Tm 2 Ti 2 O 7 [53], and barium strontium titanate (BST) [54][55][56], as well as Si 3 N 4 [32,57] and nanocrystalline diamond (NCD) [58], have been proven as pH-sensitive gate insulators for EIS sensors. Some of the recent results, including the pH-sensitive material used, deposition technique, pH sensitivity, pH range, drift, and hysteresis, are summarized in Table 1.…”
Section: Eis Ph Sensormentioning
confidence: 99%