Ti-doped indium gallium oxide electrolyte–insulator–semiconductor membranes for multiple ions and solutes detectors

Kao, Chuan-Chi; Liu, Chia Shao; Xu, Chang; Lin, Ching-Fuh; Chen, Hsiang

doi:10.1007/s10854-019-02425-3

Cited by 6 publications

(7 citation statements)

References 30 publications

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“…Figure 3 shows the X-ray diffraction (XRD) patterns of the InGaO and InGaSnO films. There is a weak peak (corresponding to nanocrystalline structure) appeared at approximately 32.0° for InGaO film, which is quite close to the (222) peaks in the In2O3 bixbyite structure crystals (about 30.6°) [29][30][31]. But the peak almost disappears for the InGaSnO film, indicating that doping Sn into InGaO leads to amorphous state.…”

Section: Resultsmentioning

confidence: 66%

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Chen

Lin

et al. 2020

Coatings

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Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

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Section: Resultsmentioning

confidence: 66%

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Chen

Lin

et al. 2020

Coatings

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“…Compared to the previous device fabricated by using various materials as the sensing membrane, the In 0.9 Ga 0.1 O membrane used in this work and revealed good properties was one of the potential materials as the sensing membrane of EGFET pH sensors. To realize In 0.9 Ga 0.1 O membrane properties for pH sensing application, the stability of the In 2 O 3 based and InGaO based sensing membrane was published in the previous study [24,36]. The In 2 O 3 based pH-EGFET was reported by B. R. Huang et al, it confirms the immediate response of the pH was changed from 2 to 12 in steps of 2 pH units [36].…”

Section: Resultsmentioning

confidence: 84%

“…The surface potential voltage (ϕ) of the In 0.9 Ga 0.1 O EGFET pH sensors between In 0.9 Ga 0.1 O membrane and pH buffer solutions can be expressed as the following equation by the site-binding model and double layer theory [24,30]:…”

Section: Resultsmentioning

confidence: 99%

“…where pH pzc is the pH value at the point of zero charge, K is Boltzmann's constant, T is the absolute temperature, q is the elementary charge, and β is the sensitivity parameter. The sensitivity parameter dependent on the various factors, including the H + ions concentration and the surface sites of the In 0.9 Ga 0.1 O membrane, it could be expressed as following equation [24,31]:…”

Section: Resultsmentioning

confidence: 99%

“…More recently, indium gallium oxide (InGaO) was also found to be a robust material as a promising sensing membrane due to its inherent properties, including wide bandgap, and can be deposited at room temperature [21,22]. Moreover, indium gallium oxide (InGaO) has been used in various applications, such as thin-film transistors (TFT) [23], electrolyte-insulatorsemiconductor [24], and solar-blind photodetectors [22]. Among these device applications, the InGaO thin-film transistors were based on their high stability and field-effect mobility, and the solar-blind photodetector has the advantage of adjustable broadened detection range between 3.5 eV to 4.9 eV.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors

2021

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In this study, the In0.9Ga0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In0.9Ga0.1O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the and pH value was approximately 56.64 μA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The In0.9Ga0.1O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the In0.9Ga0.1O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application.

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Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

Wang

et al. 2023

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Ti-doped indium gallium oxide electrolyte–insulator–semiconductor membranes for multiple ions and solutes detectors

Cited by 6 publications

References 30 publications

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors

Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

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