Developing
a low-temperature fabrication strategy of an amorphous
InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance
oxide-based thin film transistor (TFT) flexible device applications.
Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing
method (UV-ORTA), which combines ultraviolet irradiation with rapid
annealing treatment in an oxygen atmosphere, was proposed to realize
the achievement of high-performance α-IGZO TFTs at low temperature.
Experimental results have confirmed that UV-ORTA treatment has the
ability to suppress defects and obtain high-quality films similar
to high-temperature-annealing-treated samples. α-IGZO/HfAlO
TFTs with high-performance and low-voltage operating have been achieved
at a low temperature of 180 °C for 200 s, including a high μsat of 23.12 cm2 V–1 S–1, large I
on/off of 1.1 × 108, small subthreshold swing of 0.08 V/decade, and reliable
stability under bias stress, respectively. As a demonstration of complex
logic applications, a low-voltage resistor-loaded unipolar inverter
based on an α-IGZO/HfAlO TFT has been built, demonstrating full
swing characteristics and a high gain of 13.8. Low-frequency noise
(LFN) characteristics of α-IGZO/HfAlO TFTs have been presented
and concluded that the noise source tended to a carrier number fluctuation
(ΔN) model from a carrier number and correlated
mobility fluctuation (ΔN–Δμ)
model. As a result, it can be inferred that the low-temperature UV-ORTA
technique to improve α-IGZO thin film quality provides a facile
and designable process for the integration of α-IGZO TFTs into
a flexible electronic system.
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