Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Zhang, Yongchun; He, Gang; Wang, Leini; Wang, Wenhao; Xu, Xiaorong; Liu, Wenjun

doi:10.1021/acsnano.2c01286

Cited by 58 publications

(46 citation statements)

References 54 publications

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“…Recently, the supreme properties of O/S have gained tremendous attention as a next-generation channel material in 3D DRAM, NAND, and M3D to meet the never-ending Moore’s law in the intelligent semiconductor chips. − For a semiconductor application, the conventional physical vapor deposition (PVD) process cannot satisfy the stringent requirements such as conformal deposition and accurate thickness controllability on 3D nanoscaled structure, even though most of the work on O/S TFTs, until now, has been focused on the PVD route. − As an alternative approach, the atomic layer deposition (ALD) technique can provide good conformality and accurate control of the composition thickness on the basis of its unique self-limiting growth behavior . These advantages enable the O/S channel layer to be embedded in complex three-dimensional (3D) device structures, such as FinFET, gate-all-around (GAA) transistor, 3D NAND devices, etc.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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“…Therefore, the increase in the S.S. value in the Sn 5 device results from increased oxygen-related defects increasing N ss . Figure (c) compares the device performance in this work and previously reported devices, in terms of the S.S. and μ FE values. ,− Compared to devices in other reports, the Sn 3 device shows the best performance, with outstanding S.S. and reasonable μ FE values. In particular, the Sn 3 device has an extremely low S.S. (64.8 ± 1.9 mV/dec.…”

Section: Resultsmentioning

confidence: 64%

Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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The In−Sn−Ga−O (ITGO) thin-film transistor (TFT) is promising in that it possesses enhanced electrical characteristics and stability because the tin (Sn) has large spherical s orbitals and a high binding energy with oxygen (O). Recently, there have been several reports of ITGO material fabricated via sputtering. Therefore, studies that control Sn composition to achieve unique characteristics and obtain conformal films have been limited. For these reasons, we evaluated plasma-enhanced atomic layer deposition (PEALD)-derived ITGO materials with varied Sn composition. The electrical characteristics are enhanced with the Sn subcycle ratio from 1 to 5 in the ITGO films (carrier concentration: 6.4 × 10 20 to 2.2 × 10 21 cm −3 , resistivity: 8.6 × 10 −4 to 6.1 × 10 −4 Ω cm). These results are due to carrier generation by the Sn, a decrease in oxygen-related defects (22.9% to 19.5%), and suppressed indium-oxide (In 2 O 3 ) crystallinity. To demonstrate their applicability to practical devices, the ITGO films were applied to TFTs as active channel layers. The ITGO TFTs with increasing Sn content show a decrease then increase of subthreshold swing (S.S.) characteristics, while the field-effect mobility (μ FE ) slightly increases. In addition, the ITGO TFTs show improved negative bias illumination stress (NBIS) stability with increasing Sn content, while the turnaround point is observed in the Sn 5 subcycle. As a result, the ITGO TFT with the Sn 3 subcycle shows an extremely low S.S. of 64.8 ± 1.9 mV/decade and an NBIS result of −0.5 V. The outstanding performance of the ITGO TFT with Sn 3 subcycle is attributed to its low number of oxygen-related defects, amorphous structure, and low valence band maximum (VBM) level. Therefore, the ITGO TFTs with optimized Sn content have the advantages of low power consumption and resistance to an environment with illumination.

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“…It can be observed that the local environment remains almost unchanged with increasing B doping concentrations. However, the In peak gradually shifts toward low binding energy, which is, on the one hand, due to due to the bonding strength of B-O (808 kJ/mol) being stronger than that of In-O (346 kJ/mol), and on the other hand because B doping can reduce oxygen vacancy-related defects, resulting in a denser atomic stacking and enhanced electron shielding between adjacent atoms [ 25 , 26 , 27 ]. Figure 3 c presents the XPS spectra of B 1s with different B contents.…”

Section: Resultsmentioning

confidence: 99%

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Peng

et al. 2022

Nanomaterials

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Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

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Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Cited by 58 publications

References 54 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

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