Influence of an Al2O3 interlayer in a directly grown graphene-silicon Schottky junction solar cell

Rehman, Malik Abdul; Akhtar, Imtisal; Ho, Chang-Hoi; Akbar, Kamran; Farooq, Ayesha; Hussain, Sajjad; Shehzad, Muhammad Arslan; Chun, Seung‐Hyun; Jung, Jongwan; Seo, Yongho

doi:10.1016/j.carbon.2018.02.042

Cited by 81 publications

(67 citation statements)

References 36 publications

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“…However, the inhomogeneous thin insertion layers may weaken the protection effect. Therefore, ALD‐grown high‐ k dielectric materials (such as Al 2 O 3 and HfO 2 ) on Si substrate would be a better option for eliminating the dangling bonds on Si surface and preventing the direct exposure to air. Nanometer thick, condensed high‐ k dielectric oxide can effectively block oxygen from reaching the Si surface, and offers the modest tunneling barrier against reverse current.…”

Section: Discussionmentioning

confidence: 99%

“…Al 2 O 3 layer grown with atomic layer deposition (ALD) has proved to offer excellent surface passivation. Therefore, Ahn et al and Rehman et al introduced ALD‐grown Al 2 O 3 layer into Gr–Si interface for optimization. Similar to SiO 2 layer, Al 2 O 3 layer reduced the recombination at the Gr–Si surface and improved V OC and FF of Gr–Si solar cells.…”

Section: Engineering Gr/si Solar Cellsmentioning

confidence: 99%

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Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

Huang

Cong

et al. 2018

Adv Materials Inter

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Solar cells fabricated with the most dominant material in industry, silicon (Si), developed rapidly in the recent years. Traditional Si solar cells require a complex process of fabricating junction. Thanks to its exotic electrical and optical properties, graphene (Gr) has attracted tremendous research interest in optoelectronic device applications, e.g., solar cells. The Gr/Si solar cell can be achieved by a simple room‐temperature transfer technique, which exhibits great potential application in photovoltaics. Currently, many researchers focus on the strategies to dope the Gr for the cell efficiency improvement, from 1.65% to 16.2%. Although great progress has been made, there are still some key issues to be solved on the way to the commercialization of Gr/Si solar cells. Here, the recent progress in the development of Gr/Si solar cells is comprehensively reviewed, and the road map of Gr/Si solar cell techniques in the future is discussed.

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Section: Discussionmentioning

confidence: 99%

Section: Engineering Gr/si Solar Cellsmentioning

confidence: 99%

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

Huang

Cong

et al. 2018

Adv Materials Inter

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“…First, the ALD layer acts as either carrier selective transport layer or charge blocking layer: the former contributes to higher photocurrent because of the higher carrier collection efficiency; the latter significantly reduces dark current and contributes to the enhanced detection limits. For example, Rehman et al has reported that the introduction ALD‐Al 2 O 3 layer between Si/graphene heterojunction can blocks electron transport and reduces carrier recombination . Second, the introduction of ALD layer can reduce the defects in perovskite thin films and improve their film quality.…”

Section: Performance Comparison Of Self‐powered Pds Based On Hybrid Pmentioning

confidence: 99%

Atomic‐Layer Deposition‐Assisted Double‐Side Interfacial Engineering for High‐Performance Flexible and Stable CsPbBr₃ Perovskite Photodetectors toward Visible Light Communication Applications

Cen

Liu

Zhao

et al. 2019

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Self‐powered photodetectors (PDs) based on inorganic metal halide perovskites are regarded as promising alternatives for the next generation of photodetectors. However, uncontrollable film growth and sluggish charge extraction at interfaces directly limit the sensitivity and response speed of perovskite‐based photodetectors. Herein, by assistance of an atomic layer deposition (ALD) technique, CsPbBr3 perovskite thin films with preferred orientation and enlarged grain size are obtained on predeposited interfacial modification layers. Thanks to improved film quality and double side interfacial engineering, the optimized CsPbBr3 (Al2O3/CsPbBr3/TiO2, ACT) perovskite PDs exhibit outstanding performance with ultralow dark current of 10−11 A, high detectivity of 1.88 × 1013 Jones and broad linear dynamic range (LDR) of 172.7 dB. Significantly, excellent long‐term environmental stability (ambient conditions >100 d) and flexibility stability (>3000 cycles) are also achieved. The remarkable performance is credited to the synergistic effects of high carrier conductivity and collection efficiency, which is assisted by ALD modification layers. Finally, the ACT PDs are successfully integrated into a visible light communication system as a light receiver on transmitting texts, showing a bit rate as high as 100 kbps. These results open the window of high performance all‐inorganic halide perovskite photodetectors and extends to rational applications for optical communication.

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“…(2) The absorbed photon number is reduced by the planar Si wafers which is 30-40% for visible light (350-800 nm). 44 Aer graphene/Si solar cells was reported in 2010, 23 lots of methods are developed to tune the work function and conductivity of graphene and the reectance Si wafers, such as chemical doping, [45][46][47][48][49][50] increasing layer number of graphene 51,52 and introducing an interlayer, [53][54][55][56][57][58][59] all of which can help to optimize the performance of solar cells signicantly.…”

Section: The Optimization Of Graphene/si Solar Cellsmentioning

confidence: 99%