Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

Martinez-Blanque, C.; Ruiz, Francisco G.; Godoy, A.; Marín, Enrique G.; Donetti, L.; Gámiz, F.

doi:10.1063/1.4904856

Cited by 3 publications

(2 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Particularly, we have studied NWs with 5nm diameter oriented along the [111] direction (Fig. 1), since this orientation exhibits the best transport properties for holes in Si and Ge [9][10][11] . To allow a fair comparison of the electrostatics, the same high-κ insulator, Al 2 O 3 , with thickness T ins = 1.5nm and relative dielectric constant ε r = 9, is considered in all cases.…”

Section: Numerical Simulatormentioning

confidence: 99%

“…In this study, we are interested in the electrostatic behaviour of cylindrical gate-all-around (GAA) p-type NWs made of four different materials: two III-V antimonides, GaSb and InSb, and two group IV semiconductors, Si and Ge. Particularly, we have studied NWs with 5 nm diameter oriented along the (1 1 1) direction (figure 1), since this orientation exhibits the best transport properties for holes in Si and Ge [10][11][12]. To allow a fair comparison of the electrostatics, the same highκ insulator, Al 2 O 3 , with thickness T ins = 1.5 nm and relative dielectric constant ε r = 9, is considered unless otherwise specified.…”

Section: Numerical Simulatormentioning

confidence: 99%

See 1 more Smart Citation

Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

Martinez-Blanque¹,

Marín²,

Toral³

et al. 2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed and compared to that achieved by traditional semiconductors usually employed for p-MOS such as Si and Ge. To do so, a self-consistent k·p simulator has been implemented to achieve an accurate description of the Valence Band and evaluate the charge behavior as a function of the applied gate bias. The contribution and role of the constituent capacitances, namely the insulator, centroid and quantum ones are assessed. It is demonstrated that the centroid and quantum capacitances are strongly dependent on the semiconductor material. We find a good inherent electrostatic performance of GaSb and InSb NWs, comparable to their Ge and Si counterparts making these III-Sb compounds good candidates for future technological nodes.

show abstract

Section: Numerical Simulatormentioning

confidence: 99%

Section: Numerical Simulatormentioning

confidence: 99%

Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

Martinez-Blanque¹,

Marín²,

Toral³

et al. 2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

Electronic structure and electron mobility in Si1– xGex nanowires

Mugny

Triozon

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

We investigate the electronic structure and the electron mobility in Si1– xGex nanowires for relevant orientations (⟨001⟩, ⟨110⟩, and ⟨111⟩) and diameters up to 8 nm based on atomistic models. The calculation of the electronic structure with random distribution of alloy atoms is compared to the virtual crystal approximation. The electronic properties such as the effective mass and the character of the lowest conduction subband are linked with the strong variations of the phonon-limited electron mobility with varying Ge concentrations. The effect of alloy disorder on the mobility is also discussed.

show abstract