Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

Martinez-Blanque, C.; Marín, Enrique G.; Toral, Alejandro; Gonzalez-Medina, J. M.; Ruiz, Francisco G.; Godoy, A.; Gámiz, F.

doi:10.1088/1361-6463/aa9543

Cited by 3 publications

(3 citation statements)

References 25 publications

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“…For example, InSb is utilized nowadays in infrared detectors and is very potential for high-speed transistors operating at low voltages 1–6 and other ultra thin device applications 7,8 , and very recently, e.g., as building blocks of quantum computers 9 and THz transport waveguides 10 . The common challenge in developing these various InSb-based devices is how the surface or interface properties of InSb crystals can be modified in controlled manner.…”

Section: Introductionmentioning

confidence: 99%

Crystalline and oxide phases revealed and formed on InSb(111)B

Mäkelä

Rad

Lehtiö

et al. 2018

Sci Rep

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Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology. The outcome is strongly dependent on surface conditions and remarkably, the (111) plane can oxidize without changes in surface lattice symmetry, or alternatively, resulting in a complex, semicommensurate quasicrystal-like structure. The findings are of major significance for passivation via oxide termination for nano-structured III–V/oxide devices containing several crystal plane surfaces. As a proof-of-principle, we present a procedure where InSb(111)B surface is cleaned by simple HCl-etching, transferred via air, and post-annealed and oxidized in ultrahigh vacuum.

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Section: Introductionmentioning

confidence: 99%

Crystalline and oxide phases revealed and formed on InSb(111)B

Mäkelä

Rad

Lehtiö

et al. 2018

Sci Rep

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“…Hereafter, for brevity, we denote different NWs using their direction of transport. For materials with indirect bandgaps, the 6 band k • p method provides an accurate description of valence bands around the Γ point [19]. Hence for Si, Ge and GeSn, the 6 band k • p method has been used.…”

Section: Approachmentioning

confidence: 99%

Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs

Yadav

Nair

2020

IEEE J. Electron Devices Soc.

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We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge 0.96 Sn 0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum transport simulations. To properly account for the non-parabolicity and anisotropy of the valence band the k·p method was used. For each material, a set of six different transport/confinement directions were simulated to identify the direction with the highest ON-current (I ON ). For Ge, GaSb, and GeSn [001]/110/110 oriented NWFETs showed the best ON-state performance, compared to other orientations. Our simulation results show that, despite having a higher percentage of SDT in OFF-state than silicon, GaSb [001]/110/110 NWFET can outperform Si NWFETs. We further examined the role of doping in limiting SDT and demonstrated that the ON-state performance of Ge and GeSn NWFETs could be improved by reducing the doping in the source/drain (S/D) extension regions. Finally, we analyzed the impact of increased injection velocity in [001]/110/110 oriented GaSb and GeSn NWFETs, as a result of the application of uniaxial compressive stress, and showed that when compared at a fixed OFF-current (I OFF ) with unstrained NWFETs, uniaxial compressive stress deteriorates the ON-state performance due to an increase in OFF-state SDT current component.

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“…Semiconductor materials are used in transistors (Li et al, 2013), integrated circuits, power electronic devices (Martinez-Blanque et al, 2017), optoelectronic devices (Park et al, 2005) and many potential fields. Rapid development and the continuous miniaturization of integrated circuits require novel semiconductor materials instead of the traditional materials (Usman et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

A sulfur coordination polymer with wide bandgap semiconductivity formed from zinc(II) and 5-methylsulfanyl-1,3,4-thiadiazole-2-thione

Zhang

Kong

et al. 2019

Acta Crystallogr C

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The sulfur coordination polymer catena‐poly[zinc(II)‐μ2‐bis[5‐(methylsulfanyl)‐2‐sulfanylidene‐2,3‐dihydro‐1,3,4‐thiadiazol‐3‐ido‐κ2N3:S]], [Zn(C3H3N2S3)2]n or [Zn2MTT4]n, constructed from Zn2+ ions and 5‐methylsulfanyl‐1,3,4‐thiadiazole‐2‐thione (HMTT), was synthesized successfully and structurally characterized. [Zn2MTT4]n crystallizes in the tetragonal space group I (No. 82). Each MTT− ligand (systematic name: 5‐methylsulfanyl‐2‐sulfanylidene‐2,3‐dihydro‐1,3,4‐thiadiazol‐3‐ide) coordinates to two different ZnII ions, one via the thione group and the other via a ring N atom, with one ZnII atom being in a tetrahedral ZnS4 and the other in a tetrahedral ZnN4 coordination environment. These tetrahedral ZnS4 and ZnN4 units are alternately linked by the organic ligands, forming a one‐dimensional chain structure along the c axis. The one‐dimensional chains are further linked via C—H…N and C—H…S hydrogen bonds to form a three‐dimensional network adopting an ABAB‐style arrangement that lies along both the a and b axes. The three‐dimensional Hirshfeld surface analysis and two‐dimensional (2D) fingerprint plots confirm the major interactions as C—H…S hydrogen bonds with a total of 35.1%, while 7.4% are C—H…N hydrogen‐bond interactions. [Zn2MTT4]n possesses high thermal and chemical stability and a linear temperature dependence of the bandgap from room temperature to 270 °C. Further investigation revealed that the bandgap changes sharply in ammonia, but only fluctuates slightly in other solvents, indicating its promising application as a selective sensor.

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Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

Cited by 3 publications

References 25 publications

Crystalline and oxide phases revealed and formed on InSb(111)B

Crystalline and oxide phases revealed and formed on InSb(111)B

Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs

A sulfur coordination polymer with wide bandgap semiconductivity formed from zinc(II) and 5-methylsulfanyl-1,3,4-thiadiazole-2-thione

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