Crystalline and oxide phases revealed and formed on InSb(111)B

Mäkelä, Jarno; Rad, Zahra Jahanshah; Lehtiö, Juha‐Pekka; Kuzmin, M.; Punkkinen, M.; Laukkanen, P.; Kokko, K.

doi:10.1038/s41598-018-32723-5

Cited by 15 publications

(6 citation statements)

References 58 publications

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“…For the (3 × 3)-reconstructed InSb(111)B surface, a currently accepted model is that proposed by Wever et al in 1994, where the reconstructed top layer was determined to be composed of three types of In-Sb hexamers: α, β, and γ rings, from their x-ray diffraction and STM analyses [61]. This model also reasonably agrees with other experimental observations [60,64,65]. These conclusions are generally consistent with our STM results in Fig.…”

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confidence: 91%

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Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

et al. 2021

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Deposition of Bi on InSb(111)B reveals a striking Sierpiński-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30% to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.

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confidence: 91%

“…S2. An InSb(111)B surface can exhibit (3 × 3), (2 × 2), or (3 × 1) reconstruction, depending on the experimental conditions [58][59][60][61][62][63][64][65]. In our experiments, a smooth InSb(111) B surface is produced following an ultrahigh-vacuum (UHV) cleaning process (see Supplemental Material, Sec.…”

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confidence: 99%

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

et al. 2021

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“…[24d] Due to the oxophilic nature of In and Sb, bulk InSb oxidizes easily when exposed to air at room temperature, and stable In/Sb oxides quickly form on the surface of InSb. [25,26] The CQDs are more susceptible to oxidation, owing to their large surface-to-volume ratio. We observed the presence of In 2 O 3 and Sb 2 O x (x = 3 or 5) in assynthesized CQDs, as determined from X-ray photoelectron spectroscopy (XPS) analysis (Figures 1c and 1d).…”

Section: Resultsmentioning

confidence: 99%

“…Due to the oxophilic nature of In and Sb, bulk InSb oxidizes easily when exposed to air at room temperature, and stable In/Sb oxides quickly form on the surface of InSb [25,26] . The CQDs are more susceptible to oxidation, owing to their large surface‐to‐volume ratio.…”

Section: Resultsmentioning

confidence: 99%

Dicarboxylic Acid‐Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short‐Wave Infrared Photodetectors

Zhang,

Xia,

Rehl

et al. 2024

Angew Chem Int Ed

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Heavy‐metal‐free III‐V colloidal quantum dots (CQDs) are promising materials for solution‐processed short‐wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum‐size effect tuning of the bandgap. However, it has been challenging to achieve uniform InSb CQDs with bandgaps below 0.9 eV, as well as to control the surface chemistry of these large‐diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to >=1400 nm light. Here we adopt solvent engineering to facilitate a diffusion‐limited growth regime, leading to uniform CQDs with a bandgap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate‐halide co‐passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25% at 1400 nm, the highest among III‐V CQD photodetectors in this spectral region.

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“…While many of the clean InSb surfaces have been imaged with STM [18][19][20][21][22][23][24][25][26][27][28][29][30] , there have been only a few studies on the surface electronic structure of InSb with STS 25,30,31 . Most STS studies of InSb have been on the cleaved (110) (1x1) surface 25,31 , which have demonstrated the cleaved surface can be unpinned and devoid of surface states within the semiconductor band gap.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of InSb (001), (110), and (111)B surfaces

T.¹,

Inbar²,

Pendharkar³

et al. 2023

Preprint

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The electronic structure of various ( 001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned near the valence band edge. This observed pinning is consistent with a charge neutrality level lying near the valence band maximum. Sb termination was observed to shift the surface Fermi-level position by up to 254 ± 35 meV towards the conduction band on the InSb (001) surface and 60 ± 35 meV towards the conduction band on the InSb(111)B surface. The surface Sb on the (001) can shift the surface from electron depletion to electron accumulation. We propose the shift in the Fermi-level pinning is due to charge transfer from Sb clusters on the Sb terminated surfaces. Additionally, many sub-gap states were observed for the (111)B (3x1) surface, which are attributed to the disordered nature of this surface. This work demonstrates the tuning of the Fermi-level pinning position of InSb surfaces with Sb termination.

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Crystalline and oxide phases revealed and formed on InSb(111)B

Cited by 15 publications

References 58 publications

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Dicarboxylic Acid‐Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short‐Wave Infrared Photodetectors

Electronic structure of InSb (001), (110), and (111)B surfaces

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