Industrial high-rate (&amp;#x223C;14 nm/s) deposition of low resistive and transparent ZnO&lt;inf&gt;x&lt;/inf&gt;:Al films on glass

Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, Henk; Habets, D.; Simons, P.J.P.M.; Janssen, Annemieke; Beckers, E.H.A.

doi:10.1109/pvsc.2011.6186688

Cited by 5 publications

(8 citation statements)

References 14 publications

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“…Samples with 30:1 water to tin precursor ratio also demonstrated a reduction in growth rates with respect to translation speeds (see Table 1). The observed growth patterns are in-line with the reported APCVD of doped ZnO thin films where reduced film thicknesses are seen at low residence times [14]. In our studies, less pronounced difference is evident in the film growth rates at different dopant levels or precursor ratios as given in Table 1.…”

Section: Resultssupporting

confidence: 91%

“…The surface morphology is linked to other important characteristics of films, in particular the level of crystallographic orientation and the sheet resistance. Films with various electrical and optical properties have been reported for aluminium doped zinc oxide (ZnO) thin films by controlling the translation rate in the APCVD process [14]. According to the best of our knowledge, no studies have been conducted for the FTO thin film properties, probably due to lack of functionality within the process.…”

Section: Introductionmentioning

confidence: 99%

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Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

2016

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Abstract:In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200) plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200) preferred orientation. For low dopant concentration levels, atomic force microscope (AFM) studies showed a reduction in roughness (and lower optical haze) with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

2016

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“…Typical sheet resistances used are 10 Ω/sq. Another reason of its popularity is not only the material quality, but also the availability of large scale deposition processes ( [4], [5]).…”

Section: Introductionmentioning

confidence: 99%

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Deelen¹,

Barink²,

Klerk³

et al. 2014

Progress in Photovoltaics

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For thin film solar cells, there is a large gap between the record efficiencies and panel power output. It was found that for a “typical industrial” CIGS cell efficiency of 15.5%, the efficiency drops to 11.7% when it is operating under the circumstances of a monolithically integrated solar panel. Part of this gap is due to limited conductivity and transmittance of the front contact. By application of a metallic grid, the conductivity can be improved by over two order of magnitude at a transmittance loss of only a few percent as was shown experimentally. In addition, modeling was used to quantify the impact of such approach on the power output of monolithically integrated solar panels. This model includes optical and resistive losses, as well as related losses caused by the inhomogeneity of the operating voltage over the surface. Both power output and the different types of losses are mapped out for various cell configurations. Optimization of transparent conductive oxide resistance, cell length, finger width, and finger spacing of grids was performed and led to an efficiency improvement from 11.7% to 13.8% when the front contact is upgraded with a metallic grid consisting of 20 µm wide parallel fingers positioned perpendicular to the interconnect. Further optimization for a wide variety of cell and grid configurations show that for a technically more feasible size of 100 µm wide fingers, the calculated efficiency is still 13.5%. Finally, the power output is mapped out for a large number of configurations as to create an overview and insight in the interdependencies of cell configuration and finger dimensions. Copyright © 2014 John Wiley & Sons, Ltd.

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“…This way multilayers have been made and with approximately 450 nm layer thickness for each pass. Moreover, it was found that the full width half maximum of the (002) XRD peak declined more than with single layers, indicating a higher crystalline quality [11]. Indeed, crystal sizes increased and R ms values of 12 nm, 25 nm and 32 nm were obtained for single, double and triple passes, respectively.…”

Section: Zno Depositionmentioning

confidence: 95%

Transparent conducting materials: overview and recent results

et al. 2012

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An overview of different transparent conductors is given. In addition, atmospheric pressure CVD of ZnO resulted in conductivities below 1 mΩ cm for a temperature of 480°C, whereas at a process temperature of 200°C a value of 2 mΩ cm was obtained. Also atmospheric pressure spatial ALD was used to make conductive ZnO. Furthermore, the properties of transparent conductive oxides (TCO) can be enhanced by application of metallic grids. This way, sheet resistances of below 0.1 Ω/sq and transmittances above 85 % can be achieved. Modeling indicates that the performance of thin film cells can be enhanced by18% using a grid/TCO combination. Light scattering is a vital element of thin film solar cells and both texturization and multimaterial approaches for advanced light management such as plasmonics are discussed.

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Industrial high-rate (∼14 nm/s) deposition of low resistive and transparent ZnO<inf>x</inf>:Al films on glass

Cited by 5 publications

References 14 publications

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Transparent conducting materials: overview and recent results

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