2015
DOI: 10.1016/j.mee.2015.03.071
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Inductively coupled plasma etching of tapered via in silicon for MEMS integration

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Cited by 8 publications
(4 citation statements)
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“…Such a process therefore requires at least two power supplies: one for the plasma source where the ions and reactive radicals are formed, and another to negatively polarize (bias) the substrate to attract and accelerate ions to the surface being etched away. Because this technique makes it possible to etch structures of a very high aspect ratio (HAR), it is widely used in the semiconductor industry: from Through-Silicon Vias (TSV) manufacturing [21], through nanocarbon film etching [22], to GaN and Si surface treatment [23], [24].…”
Section: A Chemical Vapor Depositionmentioning
confidence: 99%
“…Such a process therefore requires at least two power supplies: one for the plasma source where the ions and reactive radicals are formed, and another to negatively polarize (bias) the substrate to attract and accelerate ions to the surface being etched away. Because this technique makes it possible to etch structures of a very high aspect ratio (HAR), it is widely used in the semiconductor industry: from Through-Silicon Vias (TSV) manufacturing [21], through nanocarbon film etching [22], to GaN and Si surface treatment [23], [24].…”
Section: A Chemical Vapor Depositionmentioning
confidence: 99%
“…The hourglass profile of tapered pillars was achieved by molding PDMS into a Si substrate processed on both sides by alternating anisotropic deep reactive ion etching (DRIE, Bosch process) and isotropic etching of silicon. Such etching approach creates a staircase-like profile while precisely defining the tapering angle of the etched holes and the location of their conjunction [3], [4]. Fine tuning of the tapering angle was controlled by knowing the etch rates of both isotropic and anisotropic etching processes.…”
Section: Fabricationmentioning
confidence: 99%
“…Inductively coupled plasma (ICP) source has been widely used in semiconductor material processing due to its advantages such as low electron temperature and high plasma density. [1][2][3] To improve the production efficiency and reduce the fabrication costs of microelectronic devices, large-area plasma sources have been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…Inductively coupled plasma (ICP) source has been widely used in semiconductor material processing due to its advantages such as low electron temperature and high plasma density. [ 1–3 ] To improve the production efficiency and reduce the fabrication costs of microelectronic devices, large‐area plasma sources have been proposed. However, when the coil length becomes comparable to the wavelength of radio frequency (RF) source, the standing wave is excited in the coil and produces strong non‐uniform plasma over the wafer surface.…”
Section: Introductionmentioning
confidence: 99%