Inductively coupled plasma etching of GaAs in Cl 2 /Ar, Cl 2 /Ar/O 2 chemistries with photoresist mask

Li, Kai; Ren, Xiaomin; Huang, Yongqing; Cai, Shiwei; Duan, Xiaofeng; Wang, Qi; Kang, Chao; Li, Jun-shuai; Chen, Qingtao; Fei, Jia-Rui

doi:10.1016/j.apsusc.2015.08.022

Cited by 14 publications

(4 citation statements)

References 18 publications

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“…18 Compared to size exclusion chromatography (SEC) 16,35 and light scattering, 16,35,44 multi-pore nanofluidic devices offer superior resolution and single-particle sensitivity. In contrast to transmission electron microscopy (TEM), 45 which has limited throughput, resistive-pulse sensing can measure thousands of particles individually and in real time. Mass spectrometry (MS) [20][21] has single particle sensitivity, but electrospray ionization requires volatile buffers, which are not typical for assembly.…”

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confidence: 99%

Evolution of Intermediates during Capsid Assembly of Hepatitis B Virus with Phenylpropenamide-Based Antivirals

et al. 2019

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The self-assembly of virus capsids is a potential target for antivirals due to its importance in the virus lifecycle. Here, we investigate the effect of phenylpropenamide derivatives B-21 and AT-130 on the assembly of hepatitis B virus (HBV) core protein. Phenylpropenamides are widely believed to yield assembly of spherical particles resembling native, empty HBV capsids. Because the details of assembly can be overlooked with ensemble measurements, we performed resistive-pulse measurements on nanofluidic devices with four pores in series to characterize the size distributions of the products in real time. With its single particle sensitivity and compatibility with typical assembly buffers, resistive-pulse sensing is well suited for analyzing virus assembly in vitro. We observed that assembly with B-21 and AT-130 produced a large fraction of partially complete virus particles that may be on-path, off-path, or trapped. For both B-21 and AT-130, capsid assembly was more sensitive to disruption under conditions where the inter-protein association energy was low at lower salt concentrations. Dilution of the reaction solutions led to the rearrangement of the incomplete particles and demonstrated that these large intermediates may be on-path, but are labile, and exist in a frustrated dynamic equilibrium. During capsid assembly, phenylpropenamide molecules modestly increase the association energy of dimers, prevent intermediates from dissociating, and lead to kinetic trapping where the formation of too many capsids has been initiated leading to both empty and incomplete particles.

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confidence: 99%

Evolution of Intermediates during Capsid Assembly of Hepatitis B Virus with Phenylpropenamide-Based Antivirals

et al. 2019

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“…Generally, chlorine gases are the most suitable to form GaCl x and AsCl x volatile products like BCl 3, − SiCl 4, and Cl 2. ,,− The current study focused on Cl 2 /nitrogen (N 2 ) chemistry using only chlorine gas, Cl 2 , which is less corrosive and dangerous than BCl 3 or SiCl 4 . As shown in Figure , control of the nanostructure geometry by plasma etching was studied by evaluating two key parameters: the gas chemistry (Cl 2 /N 2 ratio) and the coil power.…”

Section: Resultsmentioning

confidence: 99%

Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

et al. 2022

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Vertical III–V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approach based on the structure of a thin III–V epitaxial layer on Si was proposed to obtain monolithic GaAs or GaSb nanowires as well as GaAs–Si nanowires with an axial heterostructure. Based on a few complementary metal–oxide–semiconductor-compatible fabrication steps, III–V nanowires with a high crystalline quality as well as a uniform diameter (30 nm), morphology, positioning, and orientation were fabricated. In addition, the patterning control of nanowires at the nanoscale was thoroughly characterized by structural and chemical analyses to finely tune the key process parameters. To properly control the morphology of the nanowires during reactive-ion etching (RIE), the balance between the plasma properties and the formation of a protective layer on the nanowire sidewall was studied in detail. Furthermore, high-resolution microscopy analyses were performed to gain a better understanding of the protective layer’s composition and to observe the crystalline quality of the nanowires. This approach paves the way for the possible scale-up integration of III–V-based nanowire devices with conventional Si/complementary metal–oxide–semiconductor technology.

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“…Among them, Inductively Coupled Plasma (ICP) etching technology is a high-density plasma etching process that combines physical and chemical effects, with advantages such as high plasma density, high control accuracy, and good uniformity [1][2][3] . The etching effect of ICP is affected by process parameters such as gas composition and ratio, chamber pressure, ICP power, and RF power [4][5] . The extensive use of ICP etching in device fabrication has greatly improved device performance.…”

Section: Introductionmentioning

confidence: 99%

Research On Etching of Distributed Bragg Reflector

Gao,

Song,

Zhou

et al. 2023

J. Phys.: Conf. Ser.

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This study investigated the effect of etching process parameters on the sidewall morphology and bottom metal etching damage of Distributed Bragg Reflector (DBR), and analyzed the underlying mechanisms. By comparing the etching morphology under different RF power and pressure conditions, it was found that increasing RF power and reducing pressure can solve the problem of sidewall fracture and obtain a smooth sidewall morphology. By comparing the effect of different process gases on the sidewall angle, it was found that adding O2 can reduce the DBR/Photoresit selectivity and sidewall angle while adding BCl3 can increase the DBR/Photoresit selectivity and sidewall angle. Therefore, the sidewall angle can be adjusted by controlling the type and flow rate of the etching gas. By comparing the DBR/metal selectivity under different RF power, it was found that as the RF power decreases, the DBR/metal selectivity increases, which can prevent metal splashing caused by over-etching of metal. Therefore, in DBR etching, high RF power is used for main etching to obtain a smooth sidewall morphology and the sidewall angle can be adjusted by varying the gas type and flow rate, while low RF power is used for over-etching to improve the DBR/metal selectivity and prevent metal over-etching. This study has reference significance for the development of the inverted chip DBR process.

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Inductively coupled plasma etching of GaAs in Cl 2 /Ar, Cl 2 /Ar/O 2 chemistries with photoresist mask

Cited by 14 publications

References 18 publications

Evolution of Intermediates during Capsid Assembly of Hepatitis B Virus with Phenylpropenamide-Based Antivirals

Evolution of Intermediates during Capsid Assembly of Hepatitis B Virus with Phenylpropenamide-Based Antivirals

Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Research On Etching of Distributed Bragg Reflector

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