Indium Phosphide Membrane Photonics on Silicon

Williams, Kevin; Pogoretskiy, Vadim; Engelen, Jorn P. van; Kelly, Niall P.; Tol, J.J.G.M. van der; Jiao, Yuqing

doi:10.1364/ofc.2019.m2d.4

Cited by 2 publications

(2 citation statements)

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“…The on-chip waveguide photodiode replaces bulky free-space detectors for readout. The sensing concept and the used IMOS integration platform further lends itself to the integration of lasers 21,25 , paving the way to fully-integrated optomechanical sensors with electrical inputs/outputs for displacement and force sensing.…”

Section: Discussionmentioning

confidence: 99%

Integrated nano-optomechanical displacement sensor with ultrawide optical bandwidth

et al. 2020

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Optical read-out of motion is widely used in sensing applications. Recent developments in micro- and nano-optomechanical systems have given rise to on-chip mechanical sensing platforms, potentially leading to compact and integrated optical motion sensors. However, these systems typically exploit narrow spectral resonances and therefore require tuneable lasers with narrow linewidth and low spectral noise, which makes the integration of the read-out extremely challenging. Here, we report a step towards the practical application of nanomechanical sensors, by presenting a sensor with ultrawide (∼80 nm) optical bandwidth. It is based on a nanomechanical, three-dimensional directional coupler with integrated dual-channel waveguide photodiodes, and displays small displacement imprecision of only 45 fm/Hz1/2 as well as large dynamic range (>30 nm). The broad optical bandwidth releases the need for a tuneable laser and the on-chip photocurrent read-out replaces the external detector, opening the way to fully-integrated nanomechanical sensors.

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Section: Discussionmentioning

confidence: 99%

Integrated nano-optomechanical displacement sensor with ultrawide optical bandwidth

et al. 2020

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“…While not compatible with CMOS fabrication processes, III-V technology has reached a high level of maturity as it is the basis for lasers and active photonic integrated circuits [31]. If external laser source are used it would be possible to realize the current sensor on silicon-on-insulator platform, or other nanophotonic platforms such as InP-membrane on silicon [32].…”

Section: Methodsmentioning

confidence: 99%