Frontiers in Optics + Laser Science APS/DLS 2019
DOI: 10.1364/fio.2019.fm3d.5
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Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si3N4 quantum photonic circuits

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Cited by 4 publications
(6 citation statements)
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“…Regarding the relatively low single-photon coupling efficiency into the ULLWs demonstrated here, the main contributing factors include a sub-optimal nanophotonic design and quantum dot positioning and, principally, dipole moment orientation within the GaAs device. While various techniques have been developed to solve the latter issues 32,56 the implemented photonic design featured two factors that fundamentally lead to lower efficiencies. First, the choice of a waveguide geometry imposes a limit on the QD coupling to guided, as opposed to radiative, waves 25 .…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Regarding the relatively low single-photon coupling efficiency into the ULLWs demonstrated here, the main contributing factors include a sub-optimal nanophotonic design and quantum dot positioning and, principally, dipole moment orientation within the GaAs device. While various techniques have been developed to solve the latter issues 32,56 the implemented photonic design featured two factors that fundamentally lead to lower efficiencies. First, the choice of a waveguide geometry imposes a limit on the QD coupling to guided, as opposed to radiative, waves 25 .…”
Section: Discussionmentioning
confidence: 99%
“…The top cladding thickness is chosen to ensure a weakly confined single transverse-electric (TE) guided mode with low propagation losses in the 900 nm wavelength band 31 . The on-chip single-photon source consists of a straight GaAs nanowaveguide with embedded InAs self-assembled QDs followed by an adiabatic mode transformer, a geometry that has been shown to allow efficient coupling of QD emission directly into air-clad Si 3 N 4 ridge waveguides 25,32 . Opposite to the adiabatic taper, a one-dimensional photonic crystal back-reflector designed for high reflectivity above 900 nm is introduced to allow unidirectional emission into the Si 3 N 4 waveguide.…”
Section: Device Description and Fabricationmentioning
confidence: 99%
“…To get information about the physical behavior of the device, we will set first λ = 801 nm to perform a general evaluation of the performance. After that, for each type of emitter, the geometrical parameters of the device (i.e., t, L, and Λ) are set to match the specific emission wavelength λ: (λ, t, L, Λ) = (915, 900, 263, 263 nm) for InGaAs, 26 (916, 900, 263, 263 nm) for GaAs, 27 (728, 710, 210, 210 nm) for TMDC, 28 (785, 770, 225, 225 nm) for S.molecules, 29 and (685, 680, 195, 195 nm) for diamond color centers. 30 Figure 1a shows how the slotted cross section of the cavity enhances the field of the zero-order TE mode in the gap showing an evanescent tail in the top of the waveguide.…”
Section: ■ Methodsmentioning
confidence: 99%
“…We vary the geometrical parameters of the waveguide cavity (i.e., the waveguide width, slot width, number of periods), and we obtain a theoretical estimation of the cavity performance for I, β, and the Purcell enhancement. We explore different types of promising SPS (InGaAs 26 and GaAs 27 quantum dots, single molecules, 28 localized excitons in transition metal dichalcogenides transition-metal dichalcogenide (TMDC) monolayers, 29 and diamond color centers 30 ), and we obtain theoretical near-unity I and high β simultaneously by parameter optimization. Finally, we develop a hybrid deep neural network-genetic algorithm (GA) scheme that further reduces the modal volume for achieving near-unity I with a slot width of 20 nm.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Heterostructured nanomaterials have attracted widespread attention in the past decades owing to their unique physical and chemical properties, as well as their potential uses in various fields including catalysis, 1−3 sensing, 4,5 photonics, 6 and biomedical imaging. 7,8 Heterostructures, whose chemical compositions change with positions, were intensively reported in semiconductor physics at first.…”
Section: ■ Introductionmentioning
confidence: 99%