“…To get information about the physical behavior of the device, we will set first λ = 801 nm to perform a general evaluation of the performance. After that, for each type of emitter, the geometrical parameters of the device (i.e., t, L, and Λ) are set to match the specific emission wavelength λ: (λ, t, L, Λ) = (915, 900, 263, 263 nm) for InGaAs, 26 (916, 900, 263, 263 nm) for GaAs, 27 (728, 710, 210, 210 nm) for TMDC, 28 (785, 770, 225, 225 nm) for S.molecules, 29 and (685, 680, 195, 195 nm) for diamond color centers. 30 Figure 1a shows how the slotted cross section of the cavity enhances the field of the zero-order TE mode in the gap showing an evanescent tail in the top of the waveguide.…”