Indirect interband transitions in graphite with a wide quasigap

Соболев, В. В.; Antonov, E. A.

doi:10.1134/s1063782610090113

Cited by 10 publications

(13 citation statements)

References 8 publications

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“…Above all, the progress theory of defect engineering for semiconductor devices technology (particularly in light emitting devices) using implantation has also been established [53]. Erbium implantation in silicon has been done to tailor the optical properties of Si towards the achievement of a light emission at 1.54 µm [54].…”

Section: Light Emitting Devicesmentioning

confidence: 99%

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Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

252

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Section: Light Emitting Devicesmentioning

confidence: 99%

“…Recent progress in physical basics of ion implantation technology to fabricate Si light emitting structures (LESs) based on dislocation related luminescence (DRL) and proposed for operation at wavelengths close to ∼1.6 µm are summarized in a report [53].…”

Section: Application Of Implantation To Various Semiconductorsmentioning

confidence: 99%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

252

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“…3 Summary and discussion The defect structure of the oxygen-implanted region observed with TEM on our samples differs significantly from those observed on silicon implanted with Erbium or Si and subjected by similar thermal treatment [5].…”

Section: El and CL Measurementsmentioning

confidence: 57%

“…1 Introduction Defect-related luminescence (DRL) in silicon in the spectral region 0.8 eV attracts attention of investigators as a possible candidate for CMOS compatible light source [1][2][3][4][5]. It is well known that the main sources of radiative transitions in this energy range are dislocations and/or oxygen precipitates [6].…”

mentioning

confidence: 99%

Luminescent and electrical properties of oxygen‐implanted silicon

Данилов

Vyvenko

Loshachenko

et al. 2017

Phys. Status Solidi C

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Light emitting diodes with an active defect‐rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated by means of transmission electron microscopy, SIMS, capacitance voltage, deep level transient spectroscopy, electroluminescence (EL), and cathodoluminescence (CL) techniques. The properties of two groups of n‐based samples with and without thermal pre‐treatment at 1000 °C for 15 min were compared regarding their defect structure, defects electrical activity, luminescent spectra as well as the impact of prolonged intense electron irradiation. The observed difference in the properties of such groups was explained by a difference in the density and oxygen content of oxygen‐related defects. A significant distinction between EL and CL spectra at low excitation levels was found and interpreted to be due to particular defect kinds in near‐surface and the deepest layers of the implanted region. The blue shift of EL spectra upon excitation increase reported previously is explained by the increase of penetration depth of the holes and specific depth distribution of the defects of different kinds.

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“…8 9 If the dopant do not achieves the interfaces during annealing, it is practicably to anneal the dopant additionally to shift the p-n-junctions to the interfaces. It is known (see, for example, [10][11][12][13], that dopant diffusion in materials after radiation processing is differ from dopant diffusion in materials without radiation processing. The radiation processing leads to acceleration of the diffusion.…”

Section: Introductionmentioning

confidence: 99%

Decreasing of Depth of <I>p</I>-<I>n</I>-Junction in a Semiconductor Heterostructure by Serial Radiation Processing and Microwave Annealing

Pankratov¹

2012

Jnl of Comp & Theo Nano

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It has recently been shown, that manufacturing of diffusive-junction rectifiers and implanted-junction rectifiers in a semiconductor heterostructure after appropriate choosing of parameters of the structure and optimization of annealing time leads to increase of the sharpness of p-n-junction and at one time to increase the homogeneity of dopant distribution in doped area. Formation of inhomogeneity of temperature in the heterostructure by laser or microwave annealing gives us possibility to increase the both effects at one time. It has recently been shown by experiments, that predoping radiation processing of materials leads to changing of dopant diffusion in comparison with nonprocessed one. In this paper we consider the possibility to use serial radiation processing of materials of heterostructure before doping and microwave annealing of radiation defects after doping to increase the sharpness p-n-junctions and at one time to increase the homogeneity of dopant distribution in doped area in the heterostructure.

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Indirect interband transitions in graphite with a wide quasigap

Cited by 10 publications

References 8 publications

Ion beam induced surface and interface engineering

Ion beam induced surface and interface engineering

Luminescent and electrical properties of oxygen‐implanted silicon

Decreasing of Depth of <I>p</I>-<I>n</I>-Junction in a Semiconductor Heterostructure by Serial Radiation Processing and Microwave Annealing

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