Decreasing of Depth of <I>p</I>-<I>n</I>-Junction in a Semiconductor Heterostructure by Serial Radiation Processing and Microwave Annealing

Abstract

It has recently been shown, that manufacturing of diffusive-junction rectifiers and implanted-junction rectifiers in a semiconductor heterostructure after appropriate choosing of parameters of the structure and optimization of annealing time leads to increase of the sharpness of p-n-junction and at one time to increase the homogeneity of dopant distribution in doped area. Formation of inhomogeneity of temperature in the heterostructure by laser or microwave annealing gives us possibility to increase the both effects at one time. It has recently been shown by experiments, that predoping radiation processing of materials leads to changing of dopant diffusion in comparison with nonprocessed one. In this paper we consider the possibility to use serial radiation processing of materials of heterostructure before doping and microwave annealing of radiation defects after doping to increase the sharpness p-n-junctions and at one time to increase the homogeneity of dopant distribution in doped area in the heterostructure.

On Approach to Analyze Non-Linear Model of Mass and Heat Transport During Gas Phase Epitaxy - A Possibility to Improve Properties of Films

“…In this section we used relations (8,9,(18)(19)(20) analyzed spatio-temporal distributions of temperature and concentration of growth component in flow of gas mixture on frequency of rotation of disk keeper of substrate ω and diffusion coefficient during MOCVD epitaxy of gallium arsenide (see Figs. 2 and 3).…”

“…We calculate solution of the above system of equations by method of averaging of function corrections [7][8][9][10][11]. Framework the approach to determine the first-order approximations of components of flow of mixture of gases we replace the components on not yet known their average values υv r →α 1r , v ϕ →α 1ϕ , v z →α 1z in right sides of Eqs.…”

“…The second-order approximations of the temperature and the concentrations have been calculated framework standard procedure of method of averaging of function correction [7][8][9][10][11]. Framework the approach we replace the required functions in right sides of Eqs.…”

An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal Field-Effect Transistor

“…In this situation it should be done optimization of annealing. The optimization of annealing has been done framework recently introduce criterion [13][14][15][16][17][18][19]21,22]. By using the optimization we obtain values of optimal annealing time.…”

“…It is known, that distribution of concentrations of dopants in elements of integrated circuits and their discrete analogs will be changed under influence of radiation processing (for example, during ion implantation) [20]. Because of this to decrease dimensions of elements of integrated circuits and their discrete it is attracted an interest radiation processing of materials [21,22].…”