Indirect-coupling ultraviolet-sensitive photodetector with high electrical gain, fast response, and low noise

Qian, Fengsong; Schnupp, R; Chen, C.Q; Helbig, R.; Ryssel, H.

doi:10.1016/s0924-4247(00)00444-1

Cited by 5 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They [41] were able to reduce the NEP to ∼4:4 fW by using a lock-in amplifier, which significantly increases S=N to ∼909. Qian et al [42] fabricated a Si UV-sensitive photodetector and tested its response in the range of 300-650 nm at different bias voltages. Their detector consisted of separate photoabsorption and charge multiplication regions, which were a shallow p-n junction for photoelectric conversion and a nearby n-p-n output transistor for signal amplification, respectively.…”

Section: Netd and Detectivitymentioning

confidence: 99%

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

2011

View full text Add to dashboard Cite

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21 μm wavelength.

show abstract

Section: Netd and Detectivitymentioning

confidence: 99%

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

2011

View full text Add to dashboard Cite

show abstract

“…In this paper our major interest is to derive a model and a monotone conservative scheme for its solution that would allow us to describe nonlinear transport phenomena in semiconductor structures with fast photoresponse. Such optically sensitive devices are gaining an increasing popularity in many engineering applications [7], while for a range of already existing devices, including hebt (hetero-structure-emitter bipolar transistors) and vfept (vertical field-effect photo-transistors), these transport phenomena are at the heart of functionality of the devices [1].…”

Section: Introductionmentioning

confidence: 99%

Monotone schemes for time-dependent energy balance models

Melnik¹,

Rimshans²

2004

ANZIAMJ

View full text Add to dashboard Cite

In this paper we derive a new model for the description of fast transient processes in optically sensitive semiconductors. Based on the generalised flow approach, we develop a new difference scheme for this energy balance model and show that the solution of the derived scheme satisfies the maximum principle. The model is applicable to the analysis of photodevices with fast response, and is particular useful in estimating a photo-charge response in the depletion region of phototransistor semiconductor structures.

show abstract

Deep ultraviolet detectors based on wide bandgap semiconductors: a review

Hao

Gao

et al. 2023

J Nanopart Res

View full text Add to dashboard Cite

Indirect-coupling ultraviolet-sensitive photodetector with high electrical gain, fast response, and low noise

Cited by 5 publications

References 19 publications

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

Monotone schemes for time-dependent energy balance models

Deep ultraviolet detectors based on wide bandgap semiconductors: a review

Contact Info

Product

Resources

About