No abstract

Two-dimensional hexagonal boron nitride (2D h-BN), a representative of 2D layered materials with unique structure and properties, is one of the most promising inorganic nanomaterials in recent years. The excellent properties of h-BN in the mid-infrared (MIR) region (∼2–20 μm) have also received much attention. At the same time, with the advancement of materials exploration and device-on-chip integrated systems, the synthesis of high-quality h-BN has encountered great challenges, which is a prerequisite for the application of h-BN in the MIR region. In this paper, we first review the recent advances in 2D h-BN synthesis by highlighting the research, advantages and disadvantages of various synthesis methods, and the critical issues encountered so far. Then, advances in the study and application of h-BN in the MIR region are explored, including perfect absorption, photodetectors, electro-optical modulators, phonon polaritons, and plasma excitons. Finally, we present our views on the challenges encountered in the synthesis and application of 2D h-BN in the MIR region in the near future in the context of the article’s discussion and the potential of h-BN development, with the hope this review will be of some help to relevant researchers.

In recent years, the thermoelectric properties of one-dimensional boron nitride nanomaterials have gradually attracted widespread attention of researchers in the world. In this paper, boron carbon nitrogen based composite nanofiber films were prepared by electrospinning. It is found that the diameter of nanofibers decreases in BCNNTs/PVA/PEDOT composite films when electrospinning voltage rises, while diameter increases as PVA and BCNNTs concentration increase of electrospinning precursor solution. Finally, thermoelectric power factor is investigated of the composite nanofiber films. It is verified that thermoelectric properties of the films closely related to electrospinning quality. However, fiber density of single-layer BCNNTs/PVA/ PEDOT nanofiber film is too low, folding increase the density and thickness of multilayer BCNNTs/PVA/PEDOT nanocomposite fiber films, and the thermoelectric characteristics are significantly improved. The Seebeck coefficient can reach 3.62 mV/K and the power factor is 29.09 nW/mK 2 .

The fabrication process of vacuum ultraviolet (VUV) detectors based on traditional semiconductor materials is complex and costly. The new generation of wide-bandgap semiconductor materials greatly reduce the fabrication cost of the entire VUV detector. We use the chemical vapor deposition (CVD) method to grow boron nitride nanoribbons (BNNRs) for VUV detectors. Morphological and compositional characterization of the BNNRs was tested. VUV detector based on BNNRs exhibits strong response to VUV light with wavelengths as short as 185 nm. The photo–dark current ratio (PDCR) of this detector is 272.43, the responsivity is 0.47 nA/W, and the rise time and fall time are 0.3 s and 0.6 s. The response speed is faster than the same type of BN-based VUV detectors. This paper offers more opportunities for high-performance and low-cost VUV detectors made of wide-bandgap semiconductor materials in the future.

No abstract

No abstract

Energy recovery and reuse, industrial waste heat, and thermal energy recovery and conversion in emerging electronic devices are topics of widespread interest. Flexible composite thermoelectric (TE) films have become the key to TE conversion, and many studies and synthesis methods related to them have made great progress. However, little research has been performed on the corresponding composites of typical TE materials with low-dimensional nanotubular materials, particularly modulation of the overall TE properties using doped lowdimensional nanotubular materials. In this work, high-quality bismuth telluride (Bi 2 Te 3 ) nanowires and boron nitride nanotubes (BNNTs) were prepared using electrolytic deposition and high-temperature catalytic deposition, respectively. Bi 2 Te 3 −BNNTs composite films were prepared using a solvent hot pressing method. The Bi 2 Te 3 −BNNTs composite film conductivity reached 179.6 S/cm at room temperature (300 K), the corresponding Seebeck coefficient was 171.4 μV/K, and the power factor (PF) was 52.8 nW/mK 2 . Carbon doping of BNNTs resulted in carbon−boron nitride nanotubes (BCNNTs), and Bi 2 Te 3 −BNNTs composite films were prepared. The Bi 2 Te 3 − BCNNTs composite films obtained a conductivity of 4629.6 S/cm, at room temperature (300 K), a corresponding Seebeck coefficient of 181.2 μV/K, and a PF of 1520.0 nW/mK 2 . This study has important reference value for the application of TE conversion. Moreover, the electrical conductivity decreased by no more than 10% after 400 cycles of bending tests, and the electrical conductivity showed signs of recovery after repressing thermally, which undoubtedly proves that Bi 2 Te 3 −BCNNTs composite films have good flexibility and thermal stability, and this has contributed to the application and promotion of flexible thermoelectric materials. KEYWORDS: thermoelectric materials, bismuth telluride (Bi 2 Te 3 ) nanowires, boron nitride nanotubes (BNNTs), carbon−boron nitride nanotubes (BCNNTs), composite film

No abstract