Independent determination of In and N concentrations in GaInNAs alloys

Abstract

High-resolution x-ray diffraction (HRXRD) and photoreflectance (PR) spectroscopy were used to independently determine the In and N concentrations in GaInNAs alloys grown by solid-source molecular beam epitaxy (SSMBE). The lattice constant and bandgap energy can be expressed as two independent equations in terms of the In and N concentrations, respectively. The HRXRD measurement provided the lattice constant and the PR measurement extracted the bandgap energy. By simultaneously solving these two equations, we have determined the In and N concentrations with the error as small as 0.001.

A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source

“…Such an error is due to a large uncertainty in the accurate determination of the N concentration in dilute nitrides. However, a method has been developed to simultaneously determine the In and N concentrations with the error as small as 0.001 [31].…”

Nitrogen-electronegativity-induced bowing character in ternary zincblende Ga1−xInxN alloys

“…This has persuaded many investigators to deal with dilute nitride alloys (i.e., Ga 1−y In y N x As 1−x , with a nitrogen concentration x ≤ 6%) [8,9], in order to avoid lattice-distortion problems. The result is an almost exclusive concentration on telecommunication applications for * Tel.…”