Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1−xGex

Seger, Johan; Zhang, Shi-Li; Mangelinck, Dominique; Radamson, Henry H.

doi:10.1063/1.1498868

Cited by 68 publications

(52 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This clearly shows only polycrystalline Ni-monoGermanide (NiGe) phase forms at the annealing temperatures. The lattice constants of the formed NiGe are determined to be a = 5.81 Å, b = 5.37 Å, and c = 3.40 Å from the XRD spectra, in agreement with the reported values [16], [17].…”

Section: Resultssupporting

confidence: 73%

High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

Husain

Groot

2009

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here, we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to five orders of magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, a highly doped substrate could be used to minimize the sourceto-drain subthreshold leakage current.

show abstract

Section: Resultssupporting

confidence: 73%

High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

Husain

Groot

2009

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…It suggests that the solid-state reaction starts at 300 1C, and it substantially occurs at the annealing temperature of 500 1C. The lattice constants of the formed NiGe are determined to be a ¼ 5.81, b ¼ 5.37 and c ¼ 3.40 Å from the XRD spectra, in agreement with the reported values [9].…”

Section: Resultssupporting

confidence: 78%

High-quality NiGe/Ge diodes for Schottky barrier MOSFETs

Husain¹,

Li²,

Groot³

2008

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

a b s t r a c tSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here, we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB-MOSFETs. The Schottky diodes showed rectification of up to five orders in magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at $0.52 eV (indicating a hole barrier height of $0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared with Ni, which is crucial for high drive current in SB-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current.

show abstract

“…3 Island structures and Ge segregation ͑out diffusion͒ have been observed following hightemperature treatments. 4,5 The failure of the Ni/ Si 1−x Ge x system to form a highly uniform, low-resistivity silicide was ascribed to the larger absolute enthalpy of formation of NiSi ͑−45 kJ mol −1 ͒ than that of NiGe ͑−32 kJ mol −1 ͒, which means that NiSi is more favorable and more stable than NiGe. 6 Therefore, it is considered that the Ge is incorporated in the Ni͑Si 1−x Ge x ͒ phase when formed at lower temperatures while at higher temperatures out-diffusion of Ge occurs, allowing a minimization of the Gibbs free energy by the formation of thermodynamically stable phases like NiSi.…”

mentioning

confidence: 99%

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang

Wang

Zhao

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on relaxed Si0.7Ge0.3/Si(100) substrates was achieved via an Al interlayer mediated epitaxy. After annealing, most of the Al atoms from the original 3 nm interlayer diffused toward the surface but the remaining Al atoms in the epitaxial monogermanosilicide distributed uniformly, independent of the annealing temperatures. The incorporation of Al increases the transition temperature from the Ni-rich germanosilicide phase to the monogermanosilicide phase. The reduced Ni diffusion, the increased lattice constant due to substitutional Al, and the increased thermal expansion of monogermanosilicide are assumed to be the main mechanisms enabling the epitaxial growth of the quaternary silicide.

show abstract

Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1−xGex

Cited by 68 publications

References 15 publications

High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

High-quality NiGe/Ge diodes for Schottky barrier MOSFETs

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Contact Info

Product

Resources

About