Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

mentioning

confidence: 71%

Increasing the creation yield of shallow single defects in diamond by surface plasma treatment

Osterkamp

Scharpf

Pezzagna

et al. 2013

“…3(c) shows six peaks were observed with binding energies of 284.3, 285, 286, 283, 290, and 293 eV, which can be assigned to sp 2 , sp 3 , C-O, C-F, C-F 2 , and C-F 3 bonds, respectively. 16,18,26 Thus, the apparent presence of C-F X groups leads to higher film roughness (AFM observation Fig. 1) and the content of sp 3 bonds increases.…”

mentioning

confidence: 95%

Graphene diamond-like carbon films heterostructure

Zhao

Afandi

Jackman

2015

A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

“…We note that prior methods for fluorinating diamond have included exposure to elemental and molecular fluorine, 26 XeF 2 , 21 CF 4 plasma, 27 and CHF 3 plasma. 28 However, all of these methods are delocalized, and most are prone to the generation of defects that compromise the optoelectronic properties of diamond.…”

mentioning

confidence: 99%

Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

Shanley

Martin

Aharonovich

et al. 2014

We present a beam-directed chemical technique for controlling the charge states of near-surface luminescence centers in semiconductors. Specifically, we fluorinate the surface of H-terminated diamond by electron beam irradiation in the presence of NF 3 vapor. The fluorination treatment acts as a local chemical switch that alters the charge state of nitrogen-vacancy luminescence centers from the neutral to the negative state. The electron beam fluorination process is highly localized and can be used to control the emission spectrum of individual nanodiamonds and surface regions scann Electron beams can be used to modify surfaces with high spatial resolution by irradiating solids in vacuum, or in low pressure, gaseous environments. Chemically active surface regions have previously been used as catalytic templates for electron beam directed, room temperature chemical vapor deposition, 1-3 and to locally accelerate the etch rate of diamond. 4 Here we present a beam-directed chemical technique for controlling the charge states of luminescence centers in semiconductors.