Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions

Sun, Jiaming; Prucnal, S.; Skorupa, W.; Helm, M.; Rebohle, L.; Gebel, T.

doi:10.1063/1.2338892

Cited by 36 publications

(34 citation statements)

References 9 publications

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“…1 Other promising approaches toward this aim are Sinanocrystals (Si-ncs) embedded in a SiO 2 matrix (SiO x ) 2 and also co-doped with RE ions. 3 Published works run from those covering the visible range with RE ions, such as Ce 3þ , 4 Eu 3þ , 5 and Tb 3þ , 6 to those only focusing on the near infrared region with Nd 3þ (Ref. 7) and Er 3þ (Ref.…”

mentioning

confidence: 99%

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Berencén

Wutzler

Rebohle

et al. 2013

Applied Physics Letters

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High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.

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mentioning

confidence: 99%

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Berencén

Wutzler

Rebohle

et al. 2013

Applied Physics Letters

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“…While the electrical properties of the Ce-ORSO and silicate thin films have not yet been explored, EL of Ce-doped SiO 2 MOSLEDs formed by implanting Ce into SiO 2 has been demonstrated [27][28][29]. As with ORSO samples, the authors report on the observation of luminescence from these samples in the absence of Si-ncs.…”

Section: Luminescence Of Rare Earth-doped Silicon-based Materialsmentioning

confidence: 66%

“…As with ORSO samples, the authors report on the observation of luminescence from these samples in the absence of Si-ncs. Through the use of codoping with Gd 3þ , which has an UV emission at 316 nm and can serve to sensitize Ce 3þ , an increase in the external quantum efficiency of the luminescence of these materials from 0.5% for the case of Ce 3þ doping alone to 1.8% and output powers up to 34 mW/cm 2 have been demonstrated [29]. EL spectra and the integrated EL power density as a function of current density for these MOSLEDs are shown in Figure 17.7.…”

Section: Luminescence Of Rare Earth-doped Silicon-based Materialsmentioning

confidence: 99%

Lighting Applications of Rare Earth‐Doped Silicon Oxides

Roschuk

Wójcik

et al. 2010

Silicon Nanocrystals

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Silicon nanoclusters (Si-ncs) are of substantial interest as they play a significant role in the development of Si-based light sources [1,2]. One of the main application areas is in integrated photonics for telecommunications and computing; however, there is also a substantial market for the use of these materials in lighting and displays. Lighting accounts for approximately 20% of the $60 billion electricity market in the United States [3]. The potential to tap this market, combined with the inefficiency of incandescent bulbs, has driven research over the past decades in the area of solidstate lighting (SSL). The market for both incandescent and fluorescent light sources has been steadily dwindling with a shift toward the development of more efficient, cheaper, and environment friendly alternatives, such as SSL [4,5]. In 2007, the market for LED lighting was estimated at $330 million (a 60% increase over the previous year) and is projected to grow to $1.4 billion by 2012 [6].As with light sources for integrated photonics, the SSL market relies primarily on III-V, II-VI, or phosphor-based materials and, more recently, organic light emitting diodes (OLEDs) [5]. With the ability to attain efficient luminescence in Si-nc-based systems, however, the possibility of an all-Si approach has become attractive. Such an approach would allow manufacturers to use of the same large-scale production and processing facilities as used by the microelectronics and solar cell industries while maintaining low cost. There are two performance metrics generally of interest for solid-state lighting, the performance (in lumens) per dollar and the performance per watt (efficacy). Figure 17.1 illustrates these metrics for several common lighting sources. While LED and OLED technologies currently lead in terms of efficacy, recently explored RE-doped silicon-based materials (shown on the graph as Rare Earth Films) have a clear advantage in terms of the performance per dollar (data courtesy of Group IV Semiconductor Inc.). Furthermore, integration with the necessary electronics for driving Si-based lighting cells or pixels would then be easily achieved due to the use of a Si-platform. In particular, the use of rare earth dopants to attain specific colored emissions for mixing to obtain white light presents a viable pathway to Si-based lighting. Such an approach borrows from that commonly used with color-converting phosphors, where rare earths are routinely used, while incorporating the rare earth elements into a silicon-based host for the advantages in fabrication.

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“…The knowledge of optically excited electrical characteristics in Ce-doped SnO 2 is fundamental for design and operation of electroluminescent devices. Recently a blue electroluminescence emission (440nm) in Ce 3+ -doped SiO 2 has been reported, where the emission has its efficiency increased by codoping with Gd 3+ , caused by a energy transfer process [6]. In order to investigate electroluminescent characteristics of Ce 3+ -doped SnO 2 thin films, the optical ionization of Ce-related defects and the analysis of charge trapping back may become a very important tool, since it combines optical and electrical properties of Ce-doped SnO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO[sub 2] thin films

Silva¹,

Pineiz²,

Morais³

et al. 2008

AIP Conference Proceedings

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Abstract. Optical excitation of Ce 3+ -doped SnO 2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with 0.1at% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level.

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Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions

Cited by 36 publications

References 9 publications

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Lighting Applications of Rare Earth‐Doped Silicon Oxides

Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO[sub 2] thin films

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