Increase in the Adsorption Density of Anionic Molecules on Ceria for Defect-Free STI CMP

Kim, Ye-Hwan; Kim, Sang-Kyun; Park, Jea‐Gun; Paik, Ungyu

doi:10.1149/1.3251009

Cited by 21 publications

(8 citation statements)

References 23 publications

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“…Large particle count.-As is well known, the most likely source of scratches is particles larger than 0.5 μm resulting from particle agglomeration in the slurry. [13][14][15] To analyze the mechanism of surfactants in CMP, the large particle count (LPC) of slurries containing various surfactants was measured. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Insight on Surface Changes Post Chemical Mechanical Polishing (CMP) of the Silicon Substrate by Adding Polyoxyethylene Ether

Wang,

Zhu

et al. 2023

ECS J. Solid State Sci. Technol.

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Fatty alcohol polyoxyethylene ether (AEO-9) and isomeric decyl polyoxyethylene ether (XP-70, XP-90) were tested as additives to the slurries aiming at improving surface quality during Si fine chemical mechanical polishing (CMP) in 14 nm ultra-large-scale integration. Based on large particle count, contact angles analyzer, and polishing data, it was revealed that XP-90 exhibits improved dispersibility and hydrophilicity, reducing roughness and defects. Various analytical results on silicon surfaces including X-ray photoelectron spectrometer, Fourier transform infrared spectrometer, and scanning electron microscope data shed new light on the mechanism of polyoxyethylene ether in silicon CMP. And the surface roughness of Si is optimized as well.

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Section: Resultsmentioning

confidence: 99%

Insight on Surface Changes Post Chemical Mechanical Polishing (CMP) of the Silicon Substrate by Adding Polyoxyethylene Ether

Wang,

Zhu

et al. 2023

ECS J. Solid State Sci. Technol.

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“…The mechanism of CMP is based on (i) the chemical reaction between the chemicals in the slurry (i.e., dispersant, titrant, polishing rate accelerator or inhibitor, etc.) and the film surface being polished, (ii) the degree of adsorption of the slurry on the film surface being polished, (iii) the mechanical rubbing between the charged abrasives and the chemically reacted film surface being polished, and (iv) the coming in- or out-charge abrasives and CMP debris produced during CMP, as governed by Stoke’s law [ 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ]. Thus, the metrics of CMP performance (i.e., film polishing rate, film polishing rate selectivity, remaining abrasives and debris, CMP-induced scratches, dishing, and erosion) are principally determined by the CMP mechanism, including (i)–(iv) described above.…”

Section: Resultsmentioning

confidence: 99%

Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate

et al. 2022

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Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high Si polishing rate (500 nm/min) by accelerating the degree of the hydrolysis reaction (i.e., Si-O-H) on the polished Si wafer surface during CMP. Unlike conventional hydrolysis reaction accelerators (i.e., sodium hydroxide and potassium hydroxide), a novel hydrolysis reaction accelerator with amine functional groups (i.e., 552.8 nm/min for ethylenediamine) surprisingly presented an Si wafer polishing rate >3 times higher than that of conventional hydrolysis reaction accelerators (177.1 nm/min for sodium hydroxide). This remarkable enhancement of the Si wafer polishing rate for ethylenediamine was principally the result of (i) the increased hydrolysis reaction, (ii) the enhanced degree of adsorption of the CMP slurry on the polished Si wafer surface during CMP, and (iii) the decreased electrostatic repulsive force between colloidal silica abrasives and the Si wafer surface. A higher ethylenediamine concentration in the Si wafer CMP slurry led to a higher extent of hydrolysis reaction and degree of adsorption for the slurry and a lower electrostatic repulsive force; thus, a higher ethylenediamine concentration resulted in a higher Si wafer polishing rate. With the aim of achieving further improvements to the Si wafer polishing rates using Si wafer CMP slurry including ethylenediamine, the Si wafer polishing rate increased remarkably and root-squarely with the increasing ethylenediamine concentration.

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“…Generally, post CMP cleaning is carried out to remove any defects, such as ceria abrasive residues on the SiO 2 wafer. 24,25 It may be the case that the minor diffusion caused by ceria abrasive with FeCl 2 or CrCl 2 can mitigated during the etching process of post CMP cleaning. Hence, minor diffusion of the trace metals along with Ce may not be considered as a critical issue during the CMP process.…”

Section: Resultsmentioning

confidence: 99%

Trace Metals Optimization in Ceria Abrasive for Material Removal Rate Enhancement during ILD CMP

Shin¹,

Choi²,

Kim³

et al. 2017

ECS J. Solid State Sci. Technol.

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Ceria abrasive has been widely used in chemical mechanical planarization (CMP) to achieve a high material removal rate. To achieve optimum CMP performance, Ce 3+ ions need to be generated on the ceria particle surface so they can react with SiO 2 . Based on the redox reaction, trace metals can be good candidates for forming the required ions. In this study, FeCl 2 and CrCl 2 trace metals with ceria were evaluated in terms of their CMP performance and effectiveness. The role of oxygen vacancies formed on the ceria surface using trace metals was experimentally investigated. Compared to FeCl 2 , CrCl 2 exhibits better CMP performance. We observed that with the addition of CrCl 2 trace metals in the ceria abrasive, the removal rate of SiO 2 was enhanced by 1.3 times that of only ceria abrasive. Further, in the presence of CrCl 2 , the SiO 2 wafer surface roughness was reduced from 0.473 nm to 0.390 nm.

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Increase in the Adsorption Density of Anionic Molecules on Ceria for Defect-Free STI CMP

Cited by 21 publications

References 23 publications

Insight on Surface Changes Post Chemical Mechanical Polishing (CMP) of the Silicon Substrate by Adding Polyoxyethylene Ether

Insight on Surface Changes Post Chemical Mechanical Polishing (CMP) of the Silicon Substrate by Adding Polyoxyethylene Ether

Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate

Trace Metals Optimization in Ceria Abrasive for Material Removal Rate Enhancement during ILD CMP

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