Increase in luminescence efficiency of Al<i>x</i>Ga1−<i>x</i>As grown by organometallic VPE

Stringfellow, G. B.; Hom, G.

doi:10.1063/1.90647

Cited by 68 publications

(2 citation statements)

References 5 publications

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“…In MBE Al,Gal-,As alloys, the carbon content is always high, in the 10'' cm-3 range (D M Collins 1981 private communication). For most devices, the low roomtemperature electron mobilities due to scattering by C in A1,Gal-,As are not Chandra and Eastman (1980); A LPE, Stringfellow (1979a,b); 0, OMVPE, Stringfellow (1979); W Ge-doped MBE GaAs, Stringfellow (1980b); + Zn-doped VPE GaAs, Bruch et a1 (1979); 0 Ge-doped LPE GaAs, Stringfellow (1980b).…”

Section: Organometallic Vpementioning

confidence: 99%

Epitaxy

Stringfellow

1982

Rep. Prog. Phys.

110

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The future growth of solid-state electronics depends on the ability to produce new high-performance semiconductor devices. This requires the development of new semiconductor materials and the ability to grow special structures, particularly those with very thin layers. Epitaxy, the set of techniques used to produce highly perfect semiconductor layers, is the topic of this review. The basic concepts underlying epitaxy, thermodynamics, mass transport, surface kinetics and defect generation are discussed first. The specific epitaxial techniques are then discussed and compared in this framework. Finally, specific epitaxial techniques are discussed. Liquid-phase epitaxy (LPE) and vapour-phase epitaxy (VPE), including organometallic vapour-phase epitaxy (OMVPE) and molecular-beam epitaxy (MBE), are discussed in detail.

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Section: Organometallic Vpementioning

confidence: 99%

Epitaxy

Stringfellow

1982

Rep. Prog. Phys.

110

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“…The initial studies of MOVPE Al x Ga 1Ϫx As have often reported materials that exhibited a low photoluminescence ͑PL͒ efficiency and a reduced free electron concentration, when co-doped with shallow donors. 1,2 Both observations have been attributed to the incorporation of oxygen that results in deep level centers. These defects or defect complexes are effective nonradiative recombination centers, reducing the PL efficiency, and can compensate the shallow donors.…”

Section: Introductionmentioning

confidence: 99%

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Huang

Bray

Kuech

1996

Journal of Applied Physics

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Intentional oxygen incorporation, using diethyl aluminum ethoxide ͓(C 2 H 5 ͒ 2 AlOC 2 H 5 ͔ during metalorganic vapor phase epitaxy GaAs was found to compensate C and Zn shallow acceptors as well as Si and Se shallow donors, due to the oxygen-related multiple deep levels within the GaAs band gap. Deep level transient spectroscopy ͑DLTS͒ was used to characterize the energy levels associated with these oxygen deep centers. The total measured trap concentration from DLTS can account for the observed compensation in n-type GaAs:O. The total trap concentration in p-type GaAs:O, however, was found to be lower than the observed compensation by a factor of ϳ100. These oxygen deep centers exhibit multiple electronic states which have been associated with the local number of Al nearest neighbors and the microscopic structure of the defect. The concentration and nature of these deep levels were not influenced by the chemical identity of the shallow dopants.

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Influence of Predeposition on the Properties of GaN

Franzheld

Seifert

Butter

1986

Cryst. Res. Technol.

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Growth experiments with GaN in the system Ga/HCl/NH,/He or H, were carried out in a reactor with two deposition zones. The extent of the reaction in the first zone, called the predeposition zone, is controlled by the NH, flow rate. I n the second zone GaN is deposited epitaxially onto sapphire substrates. The variation of the carrier concentration of these epilayers indicates the dominating effect of impurities especially oxygen in opposition to the widely accepted vacancy model. Due to the high incorporation ratio of donor impurities into the solid a predeposition reduces the impurity content in the vapour phase. A reduction of the free carrier concentration in the epitaxial layers could be achieved. Different behaviour in the two carrier gas systems could be established.Wachstumsexperiniente mit GaN ini System Ga/HCl/NH,/He oder H, wurden in einem Reaktor niit zwei Abscheidungszonen durchgefiihrt. Das AusmaD der Reaktion in der ersten Zone, der sogenannten Vorabscheidungszone, wird durch die NH,-FluBrate kontrolliert. I n der zweiten Zone wird GaN epitaktisch auf Saphir-Substrate abgeschieden. Die Veranderung der Ladungstriigerkonzentration dieser Epischichten weist auf den dominierenden EinfluB von Verunreinigungen, besonders von Sauerstoff, hin im Widerspruch Zuni vorwiegend angenommenen Vakanzenmodell. Durch das groSe Einbaiiverhaltnis von Donor-Verunreinigungen in den Festkorper verringert eine Vorabscheidung den Verunreinigungsgehalt in der Gasphase. Eine Verminderung der freien Ladungstriigerkonzentration in den Epitaxieschichten konnte erreicht werden. Unterschiedliches Verhalten in den beiden Tragergassystemen konnte begriindet werden.

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Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE

Cited by 68 publications

References 5 publications

Epitaxy

Epitaxy

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Influence of Predeposition on the Properties of GaN

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