Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

Huang, Yong; Ryou, Jae‐Hyun; Dupuis, R. D.

doi:10.1016/j.jcrysgro.2011.02.039

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…In ternary materials, multiple phases are often thermodynamically stable, but in many applications one specific crystalline phase is preferred to achieve the desired properties. Ternary or quaternary materials grown by ALD are most commonly amorphous as-deposited, although this microstructure is less common for nitrides − , and for processes performed at higher temperatures. ,,,,− Consequently, most films must be annealed in order to induce crystallinity. Some general strategies to control the phase of multicomponent films deposited via ALD which will be discussed here include studying the bulk phase diagram of the material to appropriately tune composition and annealing conditions, tailoring atomic size and temperature to affect diffusion, and optimizing the supercycle recipe.…”

Section: Intermixing and Phase Formationmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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Section: Intermixing and Phase Formationmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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“…In contrast to previous work using arsine as the group Vprecusor, 9) here we report ALE of InGaAs using tertiarybutylarsine (TBAs). We also report a process flow to fabricate InGaAs fins using ALE growth on the ð0 11Þ sidewall of patterned InP ridges or fins.…”

Section: Introductionmentioning

confidence: 76%

Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls

Elias¹,

Sivananthan²,

Zhang³

et al. 2014

Jpn. J. Appl. Phys.

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We describe a fabrication process which forms InGaAs fins with sub 10 nm thickness and 180 nm height. The process flow requires no semiconductor dry-etch, thereby avoiding surface damage arising from such processes. Instead, InGaAs fins are formed using nanometer controlled atomic layer epitaxial growth, using tertiarybutylarsine, upon InP sidewall which are eventually selectively etched. Such fins can serve as channels of field effect transistors, allowing excellent electrostatics and with potentially high operating current per fin.

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“…In this method, the GaAs layer is epitaxially grown in a monomolecular unit by molecular reactions on the surface, which is why it is called MLE. The MLE was inspired by the Suntola's idea of an atomic layer epitaxy for II-VI compound semiconductor polycrystals [54,55], which provides a self-limiting mechanism and has been widely used for growth with an atomic-level thickness [56][57][58]. Similar self-limiting GaAs growth methods have been reported that use a combination of a carrier gas and a special technique, such as a rotating susceptor [59], a dual growth chamber [60], laser irradiation [61], a short-residence-time reactor vessel [62], a pulse jet [63] or an atmospheric pressure reactor [64].…”

Section: Introductionmentioning

confidence: 99%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

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Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

Cited by 4 publications

References 26 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

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