Inconel/carbon multilayers for X-ray mirrors

Aouadi, M. S.; Kleinschmidt, A.; Clarke, Glenn A.; Osborne, Nora; Parsons, R. R.; Silva, L.B. Da

doi:10.1016/s0040-6090(97)00053-9

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…This method has several advantages over other real-time techniques: it is a nondestructive technique and is highly sensitive to any small variations in composition, thickness, and surface roughness. Owing to these unique characteristics, ellipsometry is rapidly becoming accepted as a technique for controling and monitoring the deposition of semiconductor, 15,18 magnetic, 19,20 optical, 21,22 and more recently, protective coatings. 17,18 To date, however, little if no ellipsometric analysis has been performed on ternary nitride coatings.…”

Section: Introductionmentioning

confidence: 99%

Characterization of CrBN films deposited by ion beam assisted deposition

Aouadi

Namavar

Tobin

et al. 2002

Journal of Applied Physics

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This article reports on the growth and analysis of CrBN nanocrystalline materials using an ion beam assisted deposition process. In addition, this article addresses the utilization of spectroscopic ellipsometry for in situ analysis of ternary nitrides. Coatings, with a total thickness of 1.5 Ϯ0.2 m, were deposited at low temperatures (Ͻ200°C) on silicon substrates using ion beam assisted deposition. These coatings were characterized postdeposition using x-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, x-ray photoelectron spectroscopy ͑XPS͒, Auger electron spectroscopy ͑AES͒, visible-light spectroscopic ellipsometry ͑VIS-SE͒, infrared spectroscopic ellipsometry ͑IR-SE͒, and nanoindentation. The primary phases in the films were investigated using XRD. The surface morphology and nanocrystalline nature of the coatings ͑grain size of 5-7 nm͒ were deduced using AFM. The elemental composition and phase composition of the samples were determined from XPS and AES measurements and were subsequently deduced from the analysis of the VIS-SE data, and these correlated well. XPS, AES, and IR-SE revealed the crystal structure of the BN phase in the ternary compounds. The correlation of the results from these various techniques indicates that in situ SE may be a potential technique to control the growth of ternary nitride coatings in the future. The mechanical properties of the coatings were evaluated using nanohardness testing. The hardness and elastic modulus were measured to be 19-22 GPa and 250-270 GPa, respectively.

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Section: Introductionmentioning

confidence: 99%

Characterization of CrBN films deposited by ion beam assisted deposition

Aouadi

Namavar

Tobin

et al. 2002

Journal of Applied Physics

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“…Because of these features, ellipsometry has been used for in situ analysis of the oxidation and reduction processes of metals and alloys in aqueous solutions, [10][11][12][13][14][15][16][17] the formation process of oxide films by chemical vapor deposition, [18][19][20][21][22] and that of metal, oxide, nitride, and carbide films by physical vapor deposition. [23][24][25][26][27][28][29][30] Several reports are available for ellipsometric analyses of the formation process of thin films by magnetron sputtering. Aouadi et al 23 analyzed the formation of Inconel/carbon multilayer films on a Si substrate.…”

mentioning

confidence: 99%

“…[23][24][25][26][27][28][29][30] Several reports are available for ellipsometric analyses of the formation process of thin films by magnetron sputtering. Aouadi et al 23 analyzed the formation of Inconel/carbon multilayer films on a Si substrate. Lee et al 24,25 studied the initial stage of growth of Au thin films on heat-oxidized Si substrates.…”

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confidence: 99%

In Situ Ellipsometry Analysis on Formation Process of Al[sub 2]O[sub 3]-Ta[sub 2]O[sub 5] Films in Ion Beam Sputter Deposition

Kaneko

Akao

Hara

et al. 2005

J. Electrochem. Soc.

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Al 2 O 3 -Ta 2 O 5 thin films are known as highly corrosion-resistant materials for coatings. Here the formation process of Al 2 O 3 -Ta 2 O 5 films was analyzed by in situ ellipsometry during deposition by ion beam sputtering. Composite targets composed of Al 2 O 3 and Ta 2 O 5 plates were used for sputter deposition. During deposition, the formation process of thin films was monitored by a single-wavelength rotating analyzer ellipsometer attached to the sputtering system. The composition, the chemical binding states of constituent elements, and the depth profile of the elements of the films were analyzed by inductively coupled plasma-atomic emission spectroscopy, X-ray photoelectron spectroscopy ͑XPS͒, and auger-electron spectroscopy ͑AES͒, respectively. Ellipsometric analysis showed that the thickness of the film increased linearly with time after short induction periods. The refractive index of the films increases with increasing tantalum cationic fraction. The extinction coefficient of the films was larger than those of single Al 2 O 3 and Ta 2 O 5 films. The XPS analysis showed that the preferential deposition of the Ta 2 O 5 component occurred in the induction period and the codeposition of Ta 2 O 5 and Al 2 O 3 in the linear growth stage. The AES analysis showed that the content of constituent elements was homogeneous from the top to the bottom of the films in the linear growth stage.In ion beam sputter deposition ͑IBSD͒, 1,2 target materials are sputtered by inert gas ions, such as Ar + ions, from an ion gun, and sputtered particles are deposited on a substrate to form a film. Advantages of IBSD are that the film is scarcely irradiated by highenergy particles generated in a plasma area and is formed under relatively high vacuum. Because of these advantages, the film formed is free from irradiation damages and absorption of process gas. Consequently, IBSD is widely used for the formation of highquality metal, alloy, or oxide thin films. 3-10 However, most research has been engaged with characteristics of the films; a very few research projects have been concerned with the formation process of the films.Ellipsometry is a sensitive method for analyzing changes in the thickness and optical constant of surface films. It provides nondestructive optical measurements in a vacuum, gases, and solutions. Because of these features, ellipsometry has been used for in situ analysis of the oxidation and reduction processes of metals and alloys in aqueous solutions, 10-17 the formation process of oxide films by chemical vapor deposition, [18][19][20][21][22] and that of metal, oxide, nitride, and carbide films by physical vapor deposition. [23][24][25][26][27][28][29][30] Several reports are available for ellipsometric analyses of the formation process of thin films by magnetron sputtering. Aouadi et al. 23 analyzed the formation of Inconel/carbon multilayer films on a Si substrate. Lee et al. 24,25 studied the initial stage of growth of Au thin films on heat-oxidized Si substrates. Vergohl et al. 26 reported the process...

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