InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates

“…Fig. 1 shows an HRXRD rocking curve comparison between an InAs y P 1 À y MBL employing the previously reported design [11] and another InAs y P 1 À y MBL employing a more aggressive, non-linear, and step-compositional gradient. The previously reported design will be referred to as the 'standard' compositional gradient, while the new design will be referred to as the 'alternative' compositional gradient.…”

“…InP-based metamorphic buffer layers (MBLs) have been employed for a variety of device applications, including midinfrared (mid-IR) quantum well (QW) lasers [11], Mid-IR LEDs [1,2], Thermo-Photo-Voltaic cells [9,12], and Field-Effect Transistors [8]. While results from the structures grown on the MBLs have been encouraging, the inherent cross-hatched surface morphology, which becomes more apparent with increasing lattice mismatch, is expected to play an important role in the performance of device structures grown on top of the MBL.…”

“…The focus of this paper is on the investigation of the effects of antimony incorporation and the use of a non-linear compositional gradient on the surface morphology, defect generation, and defect propagation characteristics of previously reported InAs y P 1 À y MBLs [11]. For realizing mid-IR lasers on InP substrates, a separate confinement heterostructure employing InP z Sb 1 À z cladding layers has been proposed, which provides adequate carrier confinement to the active region [11].…”

“…For realizing mid-IR lasers on InP substrates, a separate confinement heterostructure employing InP z Sb 1 À z cladding layers has been proposed, which provides adequate carrier confinement to the active region [11]. Here, we also investigate the growth of the InP z Sb 1 À z cladding layers, where hillock formation and the bandgap deviation from theory is reduced when the layer is grown on the new MBL design.…”

Влияние конструкции метаморфного буферного слоя на сохраняемость параметров метаморфного транзистора InGaAs/GaAs с высокой подвижностью электронов

“…Достигнутые результаты по метаморфному росту гетероструктур свидетельствуют о перспективности использования данного подхода при производстве транзисторов с высокой подвижностью электронов (HEMT) [5], лазеров [6] и солнечных преобразователей энергии [7]. Однако для массового применения метаморфного роста в приборах необходимо исследовать сохраняемость с течением времени таких параметров, как концентрации и подвижности электронов в каналах метаморфных HEMT.…”