Improved quality of InP layer on GaAs substrates by using compositionally modulated step-graded AlGaInAs buffers

Yan, Wei; Sun, Yanhong; Dong, Junping

doi:10.1007/s10854-019-01994-7

Cited by 2 publications

(2 citation statements)

References 17 publications

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“…Misfit dislocations are restricted along with the internal interface, dislocations are significantly decreased in the uppermost InAsP layer, and no threading dislocation is observed in the In0.76Ga0.24As layer of sample A. This mainly benefits from the strain compensation around the interface by the insertion of tensile InAsyP1−y layers, which can change the dislocation glide direction and facilitate the dislocation annihilation, and the interfaces also prevent the threading dislocations from propagating vertically through the structure [25]. It is a reason of the superior surface and better two-dimensional crosshatch pattern in sample A, as illustrated in AFM analysis.…”

Section: The Structural Propertymentioning

confidence: 99%

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.

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Section: The Structural Propertymentioning

confidence: 99%

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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“…Several techniques, including two-step growth [5][6][7], strained-layer superlattice [8], post-annealing [9,10], epitaxial lateral overgrowth (ELO) [11], and AlGaInAs graded buffers [12,13], have been investigated to reduce the defect density of an InP/GaAs virtual substrate. The two-step method, which was developed early to grow GaAs on Si, was simple and useful.…”

Section: Introductionmentioning

confidence: 99%

Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition

Tsai

2022

Coatings

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Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid growth method involving a thin indium gallium arsenide (InGaAs) linearly graded buffer, two-step InP growth, and a post-annealing process. Transmission electron microscopic observations showed that a traditional two-step InP/GaAs virtual substrate was smooth but had a high threading dislocation density (TDD) of 1.5 × 109 cm−2 near the InP surface. The high TDD value can be reduced to 2.3 × 108 cm−2 by growing the two-step InP on a thin InGaAs linearly graded buffer. The TDD of an InP/GaAs virtual substrate can be further improved to the value of 1.5 × 107 cm−2 by removing the low-temperature InP nucleation layer and carrying out a post-annealing process. A possible reason for the improvement in TDD may relate to a dislocation interaction such as the annihilation of mobile threading dislocations. Room-temperature photoluminescence spectra of InP/GaAs virtual substrates with different TDD values were compared in this study. The optical and micro-structural characterization results suggest that the proposed growth method may be feasible for making good-quality and relatively low-cost InP/GaAs virtual substrates for the integration of optoelectronic devices on them.

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Improved quality of InP layer on GaAs substrates by using compositionally modulated step-graded AlGaInAs buffers

Cited by 2 publications

References 17 publications

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition

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