Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Li, Xuefei; Xu, Jianming; Wei, Tieshi; Yang, Weishen; Jin, S.; Wu, Yuanyuan; Lu, Shulong

doi:10.3390/cryst11121590

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…An asymmetric spectrum with a high‐energy tail specific to band‐to‐band transition was observed. [ 48,49 ] The spectrum shape reflects the density of states in the electronic structure and the Boltzmann distribution of carriers in GaInAsP alloys. [ 48,49 ] Hence, this result indicates that GaInAsP with a 1.5 eV bandgap energy was obtained using HVPE.…”

Section: Resultsmentioning

confidence: 99%

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

Yoshida

Oshima

Makita

et al. 2023

Adv Energy and Sustain Res

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Multijunction solar cells combining III–V and Si materials can provide high photoelectric conversion efficiency. Two‐terminal III–V//Si triple‐junction solar cells with an efficiency of 35.9% have already been developed using metal–organic vapor‐phase epitaxy and the direct wafer bonding technique. This study, however, proposes the low‐cost fabrication of III–V solar cells using hydride vapor‐phase epitaxy (HVPE). GaInAsP solar cells are fabricated using HVPE to apply to middle cells in III–V//Si triple‐junction structures. By controlling the partial pressure of the precursors, the optimal bandgap energy of 1.5 eV is obtained for the HVPE‐grown GaInAsP quaternary alloys. The 1.5 eV GaInAsP single‐junction solar cells show higher open‐circuit voltage than the HVPE‐grown GaAs solar cells. The open‐circuit voltage of the GaInAsP solar cells fabricated with a GaInAsP growth rate of 77.6 μm h−1 reaches 1.1 V upon the formation of the rear‐heterojunction structure. In addition, the external quantum efficiency spectra of the HVPE‐grown GaInP/GaInAsP dual‐junction solar cells show that the 1.5 eV GaInAsP solar cells are superior to the GaAs solar cells in terms of current matching for subcells in the III–V//Si triple‐junction structures.

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Section: Resultsmentioning

confidence: 99%

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

Yoshida

Oshima

Makita

et al. 2023

Adv Energy and Sustain Res

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“…To further understand the carrier behavior inside the In-GaAsP solar cell, the Arrhenius-like equation is used to fit the experimental data of the EL intensity, [27] which can be expressed as…”

Section: Temperature-dependent El Under Varying Injectionmentioning

confidence: 99%

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Li¹,

Yang²,

Long³

et al. 2023

Chinese Phys. B

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The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence (EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.

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Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

Zhao,

Li,

Zhao

et al. 2024

Journal of Crystal Growth

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Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Cited by 5 publications

References 32 publications

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

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