InAsSb detectors for visible to MWIR high-operating temperature applications

D'Souza, Arvind I.; Ionescu, A; Salcido, Michael M.; Robinson, E.; Dawson, Larry C.; Okerlund, D.; Lyon, T. J. de; Rajavel, R. D.; Sharifi, Hasan; Yap, D.; Beliciu, M. L.; Mehta, S.; Dai, Wenhan; Chen, Gang; Dhar, Nibir K.; Wijewarnasuriya, P. S.

doi:10.1117/12.884550

Cited by 6 publications

(5 citation statements)

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“…However, the original InAsSb/AlAsSb barrier device design can have potential deficiencies associated with the choice of AlAsSb as the barrier material due to the alignment between the active layer and the barrier. Circumventing some of the difficulties resident in the original nBn design, a compound-barrier (CB) detector architecture 3 was designed and implemented with the alloy composition of the InAsSb absorber layer adjusted to achieve a 200 K cutoff wavelength of 4.3 µm. 4,5 The novel detector structure which is displayed in Figure 1, utilizes pyramid-shaped absorbers.…”

Section: Detector Architecturementioning

confidence: 99%

Electrooptical Characterization of MWIR InAsSb Detectors

D'Souza

Robinson

Ionescu

et al. 2012

Journal of Elec Materi

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InAs 1-x Sb x material with an alloy composition of the absorber layer adjusted to achieve 200K cutoff wavelengths in the 5 µm range has been grown. Compound-barrier (CB) detectors were fabricated and tested for optical response and J dark -V d measurements were acquired as a function of temperature. Based on absorption coefficient information in the literature and spectral response measurements of the midwave infrared (MWIR) nCBn detectors, an absorption coefficient formula α(Ε, x, T) is proposed.Since the presently suggested absorption coefficient is based on limited data, additional measurements of material and detectors with different x values and as a function of temperature should refine the absorption coefficient, providing a more accurate parametrization. Material electronic structures were computed using a k•p formalism. From the band structure, dark current density (J dark ) as a function of bias (V d ) and temperature (T) were calculated and matched to J dark -V d at fixed T and J dark -T at constant V d curves. There is a good match between simulation and data over a wide range of bias, but discrepancies that are not presently understood exist near zero bias.a. e-mail: arvind.d'

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Section: Detector Architecturementioning

confidence: 99%

Electrooptical Characterization of MWIR InAsSb Detectors

D'Souza

Robinson

Ionescu

et al. 2012

Journal of Elec Materi

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“…the fabricated device has a very good performance at 220 K, which will be discussed in details later. InAsSb has received extensive attention [38], [39], [41], [42]. μm has also been reported at room temperature [147].…”

Section: Device Characterization and Discussionmentioning

confidence: 99%

“…These superiorities have made InAs/GaSb SL photodetector a competitive alternative to state-of-the-art HgCdTe detector [78], [79]. As another attractive alternative of HgCdTe, the InAsSb ternary alloy also receives a lot of attention [38], [39], [41], [42]. In addition, growing of the InAsSb alloy with high uniformity and repeatability is much easier.…”

Section: Chapter 2 Backgroundmentioning

confidence: 99%

“…As another attractive alternative of HgCdTe, the InAsSb ternary alloy also receives a lot of attention [38], [39], [41], [42]. Compared with HgCdTe, this III-V alloy is much more stable and has a fairly weak dependence of band edge on In addition, growth of the InAsSb alloy with high uniformity and repeatability is much easier.…”

Section: Chapter 1 Introductionmentioning

confidence: 99%

“…Compared with HgCdTe, this III-V alloy is much more stable and has a fairly weak dependence of band edge on In addition, growth of the InAsSb alloy with high uniformity and repeatability is much easier. More importantly, the InAsSb based infrared photodetectors are expected to have high performance when operating either close to or at room temperature [38], [39], [41]. Therefore, there is vast interest on development of…”

Section: Chapter 1 Introductionmentioning

confidence: 99%

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Mid-wavelength infrared photodetection and surface plasmon enhancement

Qiu¹

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Infrared (IR) photodetectors with peak sensitivity wavelength in mid-wavelength infrared (MWIR) spectral window (3-5 μm) have attracted extensive interests due to the highest atmospheric transmission in this range. Traditional photodetectors operating in this wavelength range are mainly based on HgCdTe, PbSnTe and InSb, which either have difficulties in repeatable growth of uniform composition bulk crystals and epitaxial layers or need low temperature environment, which lead to the development of alternative material systems, such as InAs/GaSb type-II superlattice (SL) and InAsSb based material system. To improve high temperature performance of photodetectors, a concept of surface plasmon polariton (SPP) enhancement has been proposed in recent years. By placing a plasmonic structure which has strong light focusing capability in sub-wavelength regime, close to absorption region of a detector, tight spatial

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Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism

Wen

Pinkie

Bellotti

2015

Journal of Applied Physics

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The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys Direct and phonon-assisted (PA) indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs is calculated and compared under different lattice temperatures and doping concentrations. Using the Green's function theory, the electron self energy computed from the electron-phonon interaction is incorporated into the quantum-mechanical expressions of Auger and radiative recombination, which renders the corresponding minority carrier lifetime in the materials due to both direct and PA indirect processes. Specifically, the results of two pairs of materials, namely, InAs 0.91 Sb 0.09 , Hg 0.67 Cd 0.33 Te and In 0.53 Ga 0.47 As, Hg 0.38 Cd 0.62 Te with cutoff wavelengths of 4 lm and 1.7 lm at 200 K and 300 K, respectively, are presented. It is shown that for InAs 0.91 Sb 0.09 and Hg 0.67 Cd 0.33 Te, when the lattice temperature falls below 250 K the radiative process becomes the limiting factor of carrier lifetime in both materials at an n-type doping of 10 15 cm À3 , while at a constant temperature of 200 K, a high n-type doping (N D > 5 Â 10 15 cm À3 for InAs 0.91 Sb 0.09 and 3 Â 10 15 cm À3 for Hg 0.67 Cd 0.33 Te) makes the Auger process dominate. For the Auger lifetime in In 0.53 Ga 0.47 As and Hg 0.38 Cd 0.62 Te, the calculation suggested that under all the temperatures and n-doping concentrations investigated in this paper, radiative process is always the limiting factor of the materials' minority carrier lifetime. The calculation of the PA indirect Auger process in the four materials further demonstrated its indispensable contribution to the materials' total Auger rate especially at low temperature, which is necessary to reproduce some experimental data. By fitting the Beattie-Landsberg-Blakemore (BLB) formula to the numerical Auger results, the corresponding overlap integral factors jF 1 F 2 j in BLB theory are evaluated and presented to facilitate fast and accurate Auger calculations in the IR detector simulations. V C 2015 AIP Publishing LLC. [http://dx.

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InAsSb detectors for visible to MWIR high-operating temperature applications

Cited by 6 publications

References 2 publications

Electrooptical Characterization of MWIR InAsSb Detectors

Electrooptical Characterization of MWIR InAsSb Detectors

Mid-wavelength infrared photodetection and surface plasmon enhancement

Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism

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