The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys Direct and phonon-assisted (PA) indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs is calculated and compared under different lattice temperatures and doping concentrations. Using the Green's function theory, the electron self energy computed from the electron-phonon interaction is incorporated into the quantum-mechanical expressions of Auger and radiative recombination, which renders the corresponding minority carrier lifetime in the materials due to both direct and PA indirect processes. Specifically, the results of two pairs of materials, namely, InAs 0.91 Sb 0.09 , Hg 0.67 Cd 0.33 Te and In 0.53 Ga 0.47 As, Hg 0.38 Cd 0.62 Te with cutoff wavelengths of 4 lm and 1.7 lm at 200 K and 300 K, respectively, are presented. It is shown that for InAs 0.91 Sb 0.09 and Hg 0.67 Cd 0.33 Te, when the lattice temperature falls below 250 K the radiative process becomes the limiting factor of carrier lifetime in both materials at an n-type doping of 10 15 cm À3 , while at a constant temperature of 200 K, a high n-type doping (N D > 5 Â 10 15 cm À3 for InAs 0.91 Sb 0.09 and 3 Â 10 15 cm À3 for Hg 0.67 Cd 0.33 Te) makes the Auger process dominate. For the Auger lifetime in In 0.53 Ga 0.47 As and Hg 0.38 Cd 0.62 Te, the calculation suggested that under all the temperatures and n-doping concentrations investigated in this paper, radiative process is always the limiting factor of the materials' minority carrier lifetime. The calculation of the PA indirect Auger process in the four materials further demonstrated its indispensable contribution to the materials' total Auger rate especially at low temperature, which is necessary to reproduce some experimental data. By fitting the Beattie-Landsberg-Blakemore (BLB) formula to the numerical Auger results, the corresponding overlap integral factors jF 1 F 2 j in BLB theory are evaluated and presented to facilitate fast and accurate Auger calculations in the IR detector simulations. V C 2015 AIP Publishing LLC. [http://dx.
We have developed a numerical technique for performing physics-based simulations of the modulation transfer function (MTF) of infrared detector focal plane arrays. The finite-difference time-domain and finite element methods are employed to determine the electromagnetic and electrical response, respectively. We show how the total MTF can be decomposed to analyze the effect of lateral diffusion of charge carriers and present several methods for mitigation of such effects. We employ our numerical technique to analyze the MTF of a HgCdTe two-color bias-selectable infrared detector array.
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