InAs nanowire growth on oxide-masked 〈111〉 silicon

Björk, Mikael; Schmid, Heinz; Breslin, Chris; Gignac, Lynne; Riel, Heike

doi:10.1016/j.jcrysgro.2012.01.052

Cited by 58 publications

(71 citation statements)

References 33 publications

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“…The results of our fit between 440 and 480 • C show that in this range the 111 growth rate is surface kinetically limited with an activation energy of 21.5 ± 3.3 kcal mol −1 (0.94 ± 0.14 eV). This value is in good agreement with the activation energy obtained by Björk et al [52] for the same material system. The length and the width are plotted as a function of the substrate temperature, for pitch = 1000 and for opening size = 100 nm.…”

Section: Temperature Dependencesupporting

confidence: 92%

“…The image shows how the membrane growth selectivity strongly depends on the growth temperature and improves as the temperature increases. growth rate dependences of (111) B and {110} surfaces on the growth conditions, as already shown by Björk et al [52]. In general, the length of the membranes increases with the pitch for all temperatures grown.…”

Section: Dependence On the Pitch And Opening Sizesupporting

confidence: 80%

“…A similar trend has been observed several times in the growth of InAs nanowires [46][47][48][49][50][51]: the decreasing of the length by increasing the temperature above 480 • C is related to the increased thermal decomposition rate along the InAs 111 growth direction, while the decreasing of the length by decreasing the temperature below 480 • C can be explained by the reduced diffusivity of adatoms and hence their decreased incorporation probability at the nanostructure tip, limiting the growth along the 111 B direction. As it has been done in other works [52], we fitted the length of the membranes as a function of the inverse temperature (not shown). The results of our fit between 440 and 480 • C show that in this range the 111 growth rate is surface kinetically limited with an activation energy of 21.5 ± 3.3 kcal mol −1 (0.94 ± 0.14 eV).…”

Section: Temperature Dependencementioning

confidence: 99%

See 2 more Smart Citations

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Russo-Averchi¹,

Dalmau-Mallorquí²,

Canales-Mundet³

et al. 2013

Nanotechnology

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Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering properties. In this paper we study how to tune the morphology of the membranes by changing the growth conditions. We examine the role of the V/III ratio, substrate temperature, mask opening size and inter-hole distances in determining the size and shape of the structures. Our results show that the nano-membranes form by a combination of the growth mechanisms of nanowires and the Stranski-Krastanov type of quantum dots: in analogy with nanowires, the length of the membranes strongly depends on the growth temperature and the V/III ratio; the inter-hole distance of the sample determines two different growth regimes: competitive growth for small distances and an independent regime for larger distances. Conversely, and similarly to quantum dots, the width of the nano-membranes increases with the growth temperature and does not exhibit dependence on the V/III ratio. These results constitute an important step towards achieving rational design of high aspect-ratio nanostructures.

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Section: Temperature Dependencesupporting

confidence: 92%

Section: Dependence On the Pitch And Opening Sizesupporting

confidence: 80%

Section: Temperature Dependencementioning

confidence: 99%

See 1 more Smart Citation

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Russo-Averchi¹,

Dalmau-Mallorquí²,

Canales-Mundet³

et al. 2013

Nanotechnology

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“…(c) Schematics of a grown III-V nanowire on Si with the vapor-liquid-solid (VLS) technique 87 and nanowire selective-area epitaxy (NW-SAE). 135 The scanning electron micrograph shows InAs grown via NW-SAE on Si, and the HR-TEM image shows the resulting high-quality Si/InAs heterointerface. (d) In the template-assisted growth technique, nanotube templates of oxide are fabricated on Si substrates and fi lled by selective epitaxy with III-V material.…”

Section: From Planar To 3d Device Structuresmentioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

Self Cite

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“…Various growth strategies have been employed for the growth parameter studies of InAs NWs including selective area growth (SAG) (Mandl et al 2011;Bjoerk et al 2012), catalyst-free growth on SiO x -coated substrates Koblmüller et al 2010;Madsen et al 2011), and Au-catalyzed growth (Dayeh et al 2007;Tchernycheva et al 2007;Babu and Yoh 2011;Zhang et al 2016). An investigation of the influence of growth parameters on In-droplet-assisted InAs NWs grown on Si would unravel the conditions for realizing optimal NWs with the highest density and aspect ratio as well as enable for the predictable and reproducible fabrication of high performance, and impurity-free nanoelectronic devices compatible with the CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

Anyebe

2017

Appl Nanosci

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The influence of growth parameters on the morphology and density of InAs nanowires (NWs) grown on bare Si substrates using Indium (In) droplets as catalyst is investigated. By tuning the growth temperature, V/III flux ratio, and growth rate, the diameter and yield of asgrown NWs were controllably manipulated. It is demonstrated that the In-droplet-assisted growth of InAs NWs can only be realized on bare Si within a relatively narrow growth window of 420-475°C. Below 420°C, NWs' growth is kinetically limited, while the highest yield of vertically aligned NWs was obtained at *450°C. It is shown that In-catalyzed InAs NWs nucleation can only be realized on Si at highly As-rich conditions (V/III flux ratio [50), while the axial growth rate was found to be strongly dependent on the V/III flux ratio. The nucleation and axial growth of In-catalyzed InAs NWs are promoted by a low growth rate, while a high growth rate favors the formation of unwanted parasitic islands.

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InAs nanowire growth on oxide-masked 〈111〉 silicon

Cited by 58 publications

References 33 publications

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

III–V compound semiconductor transistors—from planar to nanowire structures

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

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