InAs/InSb nanowire heterostructures grown by chemical beam epitaxy

Abstract

We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn(2), and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

“…The high In particle content in nanowires with high x matches the results of previous studies on InSb nanowires. 10,12 The solid composition of the InAsSb nanowire measured by XEDS is constant throughout most of the nanowire but is lower during the first 200 nm after the InAs/InAsSb interface. A few samples were also characterized by high resolution transmission electron microscopy ͑x = 0.12-0.53͒, showing the structure to be zinc blende and without twin planes.…”

Electron beam induced current in InSb-InAs nanowire type-III heterostructures

“…5 The InAs part of the NW had a diameter $50 nm while the InSb segment was slightly thicker, due to the change in solubility of Au catalyst during growth. Separate NWs fabricated in identical technological conditions 6 showed that both InSb and InAs have n-type conductivity with InAs having electron concentration of 3 Â 10 17 cm À3 and InSb characterized by the resistivity 0.18 X cm, which for typical mobilities in such NWs corresponds to the concentration 10 16 $10 17 cm À3 .…”

One dimensional semiconductor nanostructures: An effective active-material for terahertz detection

“…InSb is a potentially interesting material due to its small electronic gap and high mobility. As recently demonstrated, [32][33][34] the InSb segment can be grown with high quality on underlying InAs stems, allowing an axial charge transport through the heterojunction, potential to achieve a further rectification effect due to band lineup. For the heterostructured InAs/InSb NWs, the InAs stem was grown by employing the same growth protocol used for the growth of tapered InAs NWs.…”