One dimensional semiconductor nanostructures: An effective active-material for terahertz detection

Abstract

One-dimensional (1D) nanostructure devices are at the frontline of studies on future electronics, although issues like massive parallelization, doping control, surface effects, and compatibility with silicon industrial requirements are still open challenges. The recent progresses in atomic to nanometer scale control of materials morphology, size, and composition including the growth of axial, radial, and branched nanowire (NW)-based heterostructures make the NW an ideal building block for implementing rectifying diodes or detectors that could be well operated into the Terahertz (THz), thanks to their typical achievable attofarad-order capacitance. Here, we report on our recent progresses in the development of 1D InAs or InAs/InSb NW-based field effect transistors exploiting novel morphologies and/or material combinations effective for addressing the goal of a semiconductor plasma-wave THz detector array technology. Through a critical review of material-related parameters (NW doping concentration, geometry, and/or material choice) and antenna-related issues, here we underline the crucial aspects that can affect detection performance across the THz frequency region.

Heterostructured hBN‐BP‐hBN Nanodetectors at Terahertz Frequencies

“…A second hBN flake, serving as passivation layer and, simultaneously, as top‐gate isolating dielectric, was then transferred on the hBN‐BP stack using the deterministic PVA method. The gate (G) electrode, patterned in shape of a split bow‐tie arm (Figure c), was deposited on the top of the hBN‐BP‐hBN stack via thermal evaporation of a 10/150 nm Cr/Au layer. We devised two sets of samples exploiting a different crystallographic orientation of the BP flake.…”

Circuit perspective of Terahertz Double-Gate MOSFET for switch

“…This work can be extended for the observation of maximum frequency of oscillation f max . This device modeling can be further analyzed for various THz radiation detectors [20][21][22]. In continuation with above, this Si based DG MOSFET can be combination of high-k dielectric materials.…”

Black Phosphorus Terahertz Photodetectors

“…To date, light detection at THz frequency in nanoscale FETs has been demonstrated to occur via the rectification of plasma waves in the transistor channel, induced by the external ac electric field . When an electromagnetic beam is coupled between the source (S) and the gate (G) electrodes, it excites carrier density oscillations, which, in turn, generate a driving longitudinal electric field through the channel.…”

“…In the physical regime in which the detection mechanism is mediated by the rectification operated by the self‐mixing of overdamped charge density waves, the transfer characteristics allow predicting the expected generated photovoltage, which is proportional to: where the minus sign accounts for the hole majority carriers, and in which loading effects arising from the finite impedance ( R L ) of the measurement setup have been properly included.…”