InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Abstract

Tunnel Field-Effect Transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at V DS = 0.1 V) are characterized in this work. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization are determined.

Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade

“…However, the InGaAsSb segment was grown using trimethylgallium, arsine, and trimethylantimony with gas phase molar fraction of 4.9⋅10 -5 , 5.1⋅10 -6 , and 1.3⋅10 -4 , respectively. Thus, compared to the growth used in [7,8], the growth rate was lower due to lower arsine flow. The final composition at the source side is In 0.29 Ga 0.71 As 0.66 Sb 0.34 determined using energy dispersive X-ray spectroscopy [8].…”

“…The fabrication follows a previously reported process [7,8]. Prior to growth, Au-seed particles were defined in arrays with 1-8 nanowires using Electron Beam Lithography (EBL) and PMMA based lift-off on an n + -InAs layer (260 nm) integrated on a highly resistive Si (111) substrate (ρ>12 kΩ-cm) [9].…”

“…Nanowires with 10-nm-thick diameter, see Fig 1a, are included on sample D that was most extensively etched. Subsequent processing of these samples was performed using the same steps as described in [7,8] More details on the devices can be found in Table 1. To further understand why the drive current decreases in thinner diameters we evaluate R ON and NDR.…”

“…A number of different semiconductors (Si as well as III-V) and geometries have been utilized to fabricate TFETs [5,6]. Vertical InAs/InGaAsSb/GaSb nanowires with 20-nm-thick channel have demonstrated the ability to operate well below the thermal limit reaching subthreshold swings down to 43 mV/dec at V DS of 0.1 V and to combine the steep slope with high current levels due to the staggered bandgap alignment [7,8]. Further device improvement and integration density require scaling of the drain, channel, and source diameters.…”

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

“…As shown in Table 1, we want to conclude this report with a comprehensive performance comparison of these TFETs: i) from simulations, the behaviors of the TFETs with HJs can meet the requirements of future electronics, proving the feasibility of TFET theoretically; ii) in both simulations and experiments, behaviors in HJ TFETs are much better than the uniform ones, indicating the correctness of doping HJs in TFETs; iii) after years of explorations and developments, the performance of Dirac-source HJ 40 40 1 × 10 6 0.5 [18] InAs/InGaAsSb/GaSb Nanowire 43 10.4 1 × 10 4 0.3 [158] www.advelectronicmat.de experimentally realized TFETs has been comparable with the simulation results in some single index evaluations. Compared with conventional MOSFETs, TFETs mainly work through the BTBT mechanism, resulting in large I on /I off ratios within small supply voltages.…”