InAs/GaSb superlattices for advanced infrared focal plane arrays

Rehm, Robert; Walther, M.; Schmitz, J.; Rutz, Frank; Fleißner, J.; Scheibner, Ralf; Ziegler, Johann

doi:10.1016/j.infrared.2009.09.005

Cited by 50 publications

(19 citation statements)

References 6 publications

(5 reference statements)

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“…Where α is the absorption coefficient, set equal to 2200 cm -1 [4]; L e and L h are the electron and hole diffusion lengths respectively, with L e set equal to 6µm [5]. R is the reflectance at the air/T2SL interface and set equal to 0.3. x 1 and x max -x 2 the thickness of the quasi neutral zone N and the quasi neutral zone P and depend on the bias voltage.…”

Section: A Comparisons Of Several T2sl Structure Designsmentioning

confidence: 99%

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Nghiem

Giard

Delmas

et al. 2017

International Conference on Space Optics — ICSO 2016

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Section: A Comparisons Of Several T2sl Structure Designsmentioning

confidence: 99%

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Nghiem

Giard

Delmas

et al. 2017

International Conference on Space Optics — ICSO 2016

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“…For this structure, the peak responsivity of 0.35 A/W at 3 mm in wavelength can be regarded as low at a short period detector with absorption layer thickness of 0.36 mm but, if the absorption layer thickness is increased four times, the quantum efficiency and photoresponse will be expected to increase theoretically [17]. Temperature dependence of the band gap energy Eg(T) of the SL structure is extracted from responsivity spectra [5], where data are taken at 50% cut-off wavelengths, measured in the range of 79e255 K by fitting Varshni's equation shown in inset of Fig.…”

Section: à3mentioning

confidence: 99%

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Tansel

Hoştut

Elagöz

et al. 2016

Superlattices and Microstructures

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a b s t r a c tTemperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.

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“…There have been numbers of high performance photodetector architectures reported in the literature. These include p-i-n structures [3][4][5] and heterojunctions such as nBn [6,7], pBp [8], CBIRD [9], M-structure [10] and review of barrier detectors [11].…”

Section: Introductionmentioning

confidence: 99%

N-structure based on InAs/AlSb/GaSb superlattice photodetectors

Hoştut

Alyörük

Tansel

et al. 2015

Superlattices and Microstructures

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a b s t r a c tWe have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and R 0 A product at 125 K were obtained as 1.8 Â 10 À6 A cm À2 and 800 O cm 2 at zero bias, respectively. The specific detectivity was measured as 3 Â 10 12 Jones with cut-off wavelengths of 4.3 lm at 79 K reaching to 2 Â 10 9 Jones and 4.5 lm at 255 K.

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InAs/GaSb superlattices for advanced infrared focal plane arrays

Cited by 50 publications

References 6 publications

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

N-structure based on InAs/AlSb/GaSb superlattice photodetectors

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