InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

Borg, Bertil; Dick, Kimberly A.; Ganjipour, Bahram; Pistol, Mats‐Erik; Wernersson, Lars‐Erik; Thelander, Claes

doi:10.1021/nl102145h

Cited by 163 publications

(166 citation statements)

References 29 publications

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“…Although significant progress has been made in the manipulation of NW nucleation and composition in both binary and ternary systems 9,10 , it is still challenging to control the morphology and size of NWs on length scales ranging from the atomic upwards, particularly for the technologically important III-Sb NWs. In general, the growth of III-Sb NWs has proven difficult from small-diameter catalyst particles in various chemical vapour deposition (CVD) techniques [11][12][13] and others, yielding larger diameters than the corresponding III-As NWs [14][15][16] . This is mainly because of the required high precursor partial pressures and large atomic size of Sb.…”

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confidence: 99%

“…For example, miniaturized InSb NWs have just been demonstrated for the generation and detection of Majorana fermions [18][19][20] . GaSb NWs are of great interest for single hole transistors in spintronics and highperformance device structures in electronics 15,16,21 , where the small diameter could reduce the carrier thermalization and enhance the performance by better gate electrostatic coupling as well as less scattering. In this regard, minimizing the uncontrolled radial NW growth via the manipulation of corresponding surface energies is an important step towards the practical implementation of III-Sb NW devices with the optimized performance.…”

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Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

et al. 2014

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Although various device structures based on GaSb nanowires have been realized, further performance enhancement suffers from uncontrolled radial growth during the nanowire synthesis, resulting in non-uniform and tapered nanowires with diameters larger than few tens of nanometres. Here we report the use of sulfur surfactant in chemical vapour deposition to achieve very thin and uniform GaSb nanowires with diameters down to 20 nm. In contrast to surfactant effects typically employed in the liquid phase and thin-film technologies, the sulfur atoms contribute to form stable S-Sb bonds on the as-grown nanowire surface, effectively stabilizing sidewalls and minimizing unintentional radial nanowire growth. When configured into transistors, these devices exhibit impressive electrical properties with the peak hole mobility of B200 cm 2 V À 1 s À 1 , better than any mobility value reported for a GaSb nanowire device to date. These factors indicate the effectiveness of this surfactant-assisted growth for high-performance small-diameter GaSb nanowires.

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Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

et al. 2014

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“…一直以来, 作为一维纳米材料中的一个重要组成部分, 半导体纳米线出色的光、电特性, 使其在纳米电子和光电子器件制造领域发挥着巨大的应用潜能 [1] , 其中, 含 Sb 元素的 III～V 族纳米材料具有较大的波尔激子半径、较窄的禁带宽度以及极佳的载流子迁移率等优良的光电学性质 [2] . 作为此类材料中的一种, GaSb 具有最高的空穴迁移率, 因此是新型光电子学器件的良好设计材料 [3] .…”

Section: 引言unclassified

Controlled Synthesis of GaSb Nanowires Based on CVD-grown and Their Optical Characterization

Luo¹,

Ge²,

Sun³

et al. 2016

Acta Chim. Sinica

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Gallium antimonide (GaSb) has a relatively narrow band gap, high electron mobility and excellent saturation velocity, in addition, p-type GaSb nanowires (NWs) can be integrated with n-type nanowire devices potentially. These properties make it applicable both optically and electrically. However, it is noted that the radial dimensions and crystal quality have remarkable influence on the performance of photovoltaic devices. Based on traditional CVD technology, the influence of Au nanoparticles on Vapoure-Liquide-Solid (VLS) growth mechanisms has been studied, GaSb nanowires grown on two different substrates which undergo gold sputtering and gold solution dropping treatment have different geometries of seed particle on nanowire tip and shapes of its body, moreover, the contact angle between these two parts provides stable condition for nanowires growth which has considerable impact on growth direction. The entire growing process is divided into three phases by the temperature: the heating phase, the synthesis phase and the cooling phase. Controllable synthesis has been realized by fixing the synthesis temperature at 900 ℃ and keeping the other factors unchanged. In the meantime, changing the synthesis time from 60 minutes to 240 minutes in steps, it is found that the breakthrough in radial dimensions and specific surface has been realized with the increase of growing time, the GaSb nanowire of 50 µm has been achieved in this paper. Furthermore, the nanowires were systematically characterized by scanning electron microscope (SEM), transmission electron microscope (TEM) and X-ray diffraction (XRD), which suggest that this material has the zincblende structure with good crystal quality and high purity. Also, the Multi-mode phonon oscillation and band-edge emission of the nanowires are shown through Raman spectroscopy (Raman) and Photoluminescence Spectroscopy (PL). All these demonstrate the superior surface morphology and good crystallinity of the obtained nanowires. The study makes contribution to the extensive exploration and novel discoveries of precise controllable growth of GaSb nanowires.

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“…1,2 Based on these nanowires, functional nanodevices, such as field effect transistors, [3][4][5] optoelectronic detectors, [6][7][8] solar cells, 9,10 light-emitting diodes, [11][12][13] and gas sensors, 14,15 have been designed and fabricated. These III-V semiconductor nanowires, especially those with narrow band gaps, have also been used to construct hybrid quantum structures for the study of novel physics phenomena such as Majorana bound states in topological superconducting systems.…”

Section: Introductionmentioning

confidence: 99%

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

Xing

2016

AIP Advances

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Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

Cited by 163 publications

References 29 publications

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

Controlled Synthesis of GaSb Nanowires Based on CVD-grown and Their Optical Characterization

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

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