Abstract:Gallium antimonide (GaSb) has a relatively narrow band gap, high electron mobility and excellent saturation velocity, in addition, p-type GaSb nanowires (NWs) can be integrated with n-type nanowire devices potentially. These properties make it applicable both optically and electrically. However, it is noted that the radial dimensions and crystal quality have remarkable influence on the performance of photovoltaic devices. Based on traditional CVD technology, the influence of Au nanoparticles on Vapoure-Liquide… Show more
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